Memory, working method thereof, and forming method thereof

Abstract

The invention provides a memory, a working method thereof, and a forming method thereof. The memory comprises a substrate, a first well region which is in the substrate and has a first dopant ion, a second well region which is at the top surface of the first well region and has a second dopant ion whose conductivity type is opposite to that of the first dopant ion, a gate structure at the surfaceof the second well region, and a doped region in the second well region on one side of the gate structure, wherein the doped region has a third dopant ion whose conductivity type is opposite to that of the second dopant ion. The memory has the advantages of simple structure and high integration degree.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a memory and its working method and forming method. Background technique [0002] With the development of information technology, the amount of stored information has increased dramatically. The increase in the amount of stored information has promoted the rapid development of the memory, and at the same time put forward higher requirements for the performance of the memory. [0003] Since the static memory (SRAM) can save the data stored in it without refreshing the circuit, and the power consumption is small, the application of the SRAM is more and more extensive. A traditional SRAM storage unit generally consists of six MOS transistors or four MOS transistors, and the number of MOS transistors in the storage unit is large, resulting in a large volume of the MOS transistors. In order to reduce the size of the memory and improve the integration level, a sin...

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Problems solved by technology

[0004] However, the integration level of existing single-transistor SRAMs is still low

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