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Optical proximity correction method and manufacturing method of mask plate

A technology of optical proximity correction and exposure conditions, which is applied in the direction of optics, originals for photomechanical processing, and photoplate-making process of patterned surface, etc., which can solve the problem of small process window and so on.

Active Publication Date: 2019-07-19
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
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  • Claims
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Problems solved by technology

[0005] However, the process window of the optical proximity corrected pattern in the prior art is small

Method used

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  • Optical proximity correction method and manufacturing method of mask plate
  • Optical proximity correction method and manufacturing method of mask plate
  • Optical proximity correction method and manufacturing method of mask plate

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Experimental program
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Embodiment Construction

[0022] As mentioned in the background, the process window of the graphics obtained by the existing optical proximity correction method is relatively small.

[0023] An optical proximity correction method, comprising: providing a target figure, in which there are several sub-target figures; setting the exposure energy extremum E 0 and exposure depth of focus extremum f 0 ;Provide OPC correction model; at the extreme value of exposure energy E0 and exposure depth of focus extremum f 0 Under the condition of , OPC correction is performed on the sub-object figure according to the OPC correction model to obtain a corrected figure, and the edge placement error of the corrected figure is less than or equal to the first threshold.

[0024] After the corrected figure is obtained, it is usually necessary to perform OPC detection on the corrected figure to obtain the position of the detection mark, which is usually called a weak point. Specifically, the simulated exposure is performed ...

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Abstract

The invention discloses an optical proximity correction method and a manufacturing method of a mask plate, and the method comprises the steps: carrying out the OPC correction of a sub-target graph toobtain an initial correction graph; performing first simulated exposure of the initial correction graph for a plurality of times to obtain a plurality of first simulated exposure graphs under a plurality of exposure conditions; acquiring a detection mark position in each first simulated exposure graph, wherein the size of the graph corresponding to the detection mark position in the characteristicsize direction is out of a first threshold range; and according to the size of the graph corresponding to the detection mark position in the characteristic size direction and the first threshold range, carrying out correction of the initial correction graph corresponding to the detection mark position for at least one time to obtain a correction graph. A process window for correcting the graph isenlarged.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an optical proximity correction method and a mask plate manufacturing method. Background technique [0002] Photolithography technology is a crucial technology in semiconductor manufacturing technology. Photolithography technology can realize the transfer of graphics from the mask to the surface of the silicon wafer to form semiconductor products that meet the design requirements. The photolithography process includes an exposure step, a development step performed after the exposure step, and an etching step after the development step. In the exposure step, light is irradiated onto the silicon wafer coated with photoresist through the light-transmitting area of ​​the mask, and the photoresist reacts chemically under the irradiation of light; The photoresist is different to the degree of dissolution of the developer, forming a photoresist pattern, and realizing the tran...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/36
CPCG03F1/36
Inventor 闵金华李艳丽郝静安沈泫
Owner SEMICON MFG INT (SHANGHAI) CORP
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