36results about How to "Meet the requirements of process design" patented technology

Provided is a hybrid integrated circuit module and a manufacturing method thereof. The manufacturing method comprises the steps that a substrate, a heat radiator and a glass fiber plate with through holes arranged at preset positions are manufactured, and an insulating layer is covered on one of the surfaces of the substrate; the glass fiber plate and the heat radiator are arranged on the surface of the insulating layer; a circuit wiring layer is arranged on the surface of the glass fiber plate; power elements and non-power elements are respectively distributed on the heat radiator and the corresponding positions of the circuit wiring layer; and metal wires are connected between the circuit wiring layer, the heat radiator, the power elements and the non-power elements. Contact reliability of bonding points is enhanced, length of bonding wires is reduced and height difference of the bonding wires is reduced so that wire punching rate in molding can be effectively reduced, and thus qualified rate of manufacturing and long-term reliability of an intelligent power module are enhanced.

The invention discloses an identification method for three-dimensional computer-aided design (CAD) model intersection manufacture characteristics. The identification method for the three-dimensional CAD model intersection manufacture characteristics is used for solving the technical problem that a combinatorial explosion exists in an existing part manufacturability automatic analysis method in a process that an optional solution is generated. According to the technical scheme of the identification method for the three-dimensional CAD model intersection manufacture characteristics, a three-dimensional CAD model expressed by model based definition (MBD) is used as an information input source, firstly a reachability analysis is conducted on each machined face through an illumination-type rule, and the axial space of a feasible cutter of each machined face is ascertained; then with the axial space of the feasible cutter of each machined face as a restraint, a machined face clustering algorithm merging a manufacture semanteme is adopted to construct each of machined area subgraphs; and finally, with each machined area subgraph as a manufacture characteristic trace which is combined together with dimensioning information, the machined area subgraphs are optimized and merged, so that identification of the manufacture characteristics is achieved. According to the identification method for the three-dimensional CAD model intersection manufacture characteristics, the manufacturability analysis is merged in the identification process of the intersection manufacture characteristics, so that the machined faces are identical in the accuracy level. In the characteristic identification process, the influence, on the characteristic identification, of the design semanteme is fully considered and practicality is improved.

The invention discloses a reducing elbow which comprises a reducing section and a body section. The cross section of the reducing section and the cross section of the body section are circular, the reducing section comprises a large end and a small end, the diameter of the reducing section is gradually enlarged from the small end to the large end, the reducing section is curved, the large end of the reducing section is communicated with the body section, and the ratio of the curved radius of the reducing section to the diameter of the small end is 1.0-3.0. The cross section of the reducing section and the cross section of the body section are circular, the diameter of the reducing section is gradually enlarged from the small end to the large end, the reducing section is curved, the large end of the reducing section is communicated with the body section, and therefore reducing and turning are achieved synchronously, reducing has the enough diffusion section, turning has the enough turning radius, the reducing elbow is even in smoke flow field, and a smoke duct body is prevented from vibrating to generate noise. The conclusion that the resistance generated by the reducing elbow is far smaller than that generated by a traditional rectangular reducing elbow is obtained through FLUENT fluid simulation software analog computation. The invention further discloses a smoke duct device.

The invention discloses an optical proximity correction method and a manufacturing method of a mask plate, and the method comprises the steps: carrying out the OPC correction of a sub-target graph toobtain an initial correction graph; performing first simulated exposure of the initial correction graph for a plurality of times to obtain a plurality of first simulated exposure graphs under a plurality of exposure conditions; acquiring a detection mark position in each first simulated exposure graph, wherein the size of the graph corresponding to the detection mark position in the characteristicsize direction is out of a first threshold range; and according to the size of the graph corresponding to the detection mark position in the characteristic size direction and the first threshold range, carrying out correction of the initial correction graph corresponding to the detection mark position for at least one time to obtain a correction graph. A process window for correcting the graph isenlarged.

A memory and a forming method are disclosed. The forming method comprises: forming an erase gate structure, a floating gate structure, and a sidewall on the floating gate structure, wherein the floating gate structure and the sidewall are corresponding to a first side wall and a second side wall opposite to the erase gate structure in the channel direction respectively, the first side wall is planar, the first side wall is recessed toward the erasing gate structure with respect to the second side wall, and the first side wall and the second side wall are discontinuous; forming an isolation film on outer surfaces of the erase gate structure, the floating gate structure and the sidewall, and a surface of a semiconductor substrate, the isolation film covering the first side wall and the second side wall; forming a barrier film on a surface of the isolation film; etching the barrier film to expose the isolation film on the surface of the semiconductor substrate, and forming a barrier layercovering the first side wall and the second side wall; etching the isolation film with the barrier layer as a mask to expose the surface of the semiconductor substrate, and forming an isolation layercovering the first side wall and the second side wall; and removing the barrier layer. The method improves the performance of the memory.

The invention discloses an upsetting device for a steel rail with a symmetric section. Upper and lower moulding boards are connected through a guide device; two upper moulds and two lower moulds are arranged between the upper and lower moulding boards; the two upper moulds are fixedly arranged on the lower end surface of the upper moulding board, the two lower moulds are fixedly arranged on the upper end surface of the lower moulding board, and the two upper moulds are separately positioned right on the two lower moulds; the two upper moulds and the two lower moulds are closed to separately form two mould cavities; each mould cavity sequentially consists of a clamping mould cavity section, an upsetting mould cavity section and a guide mould cavity section, wherein the clamping mould cavity section, the upsetting mould cavity section and the guide mould cavity section are separately in a close-fit state, an clearance fit state and a sliding fit state with a to-be-upset steel rail; twoupsetting oil cylinders are fixedly arranged on the lower moulding boards; and piston rods of the two upsetting oil cylinders are separately opposite to the two guide mould cavity sections. Integral upsetting for different product types of the steel rail with the symmetric section is accomplished through a set of tool moulds; and meanwhile, a ball grid digital display system is utilized to precisely control steel rail upsetting amount, so that process design requirements are met.

A semiconductor device and a method for forming the same, wherein the method includes: providing a semiconductor substrate, the semiconductor substrate includes a first region and a second region, the second region is adjacent to the first region; forming intrinsic fins and dummy fins, the intrinsic The characteristic fin is located on the first region of the semiconductor substrate, and the dummy fin is located on the second region of the semiconductor substrate; a first isolation layer is formed on the first region and the second region of the semiconductor substrate, and the first isolation layer covers the dummy fin A part of the sidewall of the intrinsic fin and a part of the sidewall of the intrinsic fin; a protective layer is formed on the surface of the intrinsic fin, and the area of ​​the intrinsic fin that is higher than the surface of the first isolation layer is covered by the protective layer; the dummy fin and the first isolation layer are removed. The first isolation layer in the second region; after removing the dummy fin and the first isolation layer in the second region and forming the protective layer, forming a second isolation layer on the second region of the semiconductor substrate. The method prevents the width of the intrinsic fin adjacent to the second region from being too small.

A semiconductor device and a method for forming the same, the method comprising: obtaining a plurality of discrete contact hole regions in a second groove region; obtaining a second groove modification region located in the second groove region according to the position of the contact hole region; The width of the correction area is smaller than the width of the second groove area; a sacrificial layer is respectively formed on the second groove correction area and the first groove area of ​​the dielectric layer; a first side wall and a second side wall are formed on the dielectric layer; on the second side A barrier layer is formed on the second groove area exposed by the wall, and the distance from the edge of the barrier layer to the edge of the sacrificial layer on the adjacent first groove area is equal to the minimum distance between the first side wall and the second side wall; sacrificial layer; then use the barrier layer, the first sidewall and the second sidewall as masks to etch the dielectric layer, form the first groove in the dielectric layer on both sides of the first sidewall, and form the first groove in the dielectric layer in the second groove correction area of ​​the dielectric layer A second groove is formed in the middle. The performance of the semiconductor device is improved.

The invention discloses an identification method for three-dimensional computer-aided design (CAD) model intersection manufacture characteristics. The identification method for the three-dimensional CAD model intersection manufacture characteristics is used for solving the technical problem that a combinatorial explosion exists in an existing part manufacturability automatic analysis method in a process that an optional solution is generated. According to the technical scheme of the identification method for the three-dimensional CAD model intersection manufacture characteristics, a three-dimensional CAD model expressed by model based definition (MBD) is used as an information input source, firstly a reachability analysis is conducted on each machined face through an illumination-type rule, and the axial space of a feasible cutter of each machined face is ascertained; then with the axial space of the feasible cutter of each machined face as a restraint, a machined face clustering algorithm merging a manufacture semanteme is adopted to construct each of machined area subgraphs; and finally, with each machined area subgraph as a manufacture characteristic trace which is combined together with dimensioning information, the machined area subgraphs are optimized and merged, so that identification of the manufacture characteristics is achieved. According to the identification method for the three-dimensional CAD model intersection manufacture characteristics, the manufacturability analysis is merged in the identification process of the intersection manufacture characteristics, so that the machined faces are identical in the accuracy level. In the characteristic identification process, the influence, on the characteristic identification, of the design semanteme is fully considered and practicality is improved.

An optical proximity correction method and a method for making a mask plate. The correction method includes: performing OPC correction on a sub-target figure to obtain an initial correction figure; performing several first simulation exposures on the initial correction figure to obtain a number of The first simulated exposure pattern; obtain the detection mark position in each first simulated exposure pattern, the size of the figure corresponding to the detection mark position in the direction of the feature size is outside the first threshold range; according to the figure corresponding to the detection mark position in the feature size The size of the direction and the first threshold range are corrected at least once on the initial correction figure corresponding to the position of the detection mark to obtain the correction figure. The crafting window for correction graphics has been increased.

The invention discloses an extension method for a circulating water system of a power plant. A new circulating water pool is independently built beside an old circulating water pool, and is communicated with the old circulating water pool through a communicating pipe, the new circulating water pool and the old circulating water pool are connected in parallel with a main pipe, running of an existing circulating water system is not influenced in a process of building the new circulating water pool, safe and stable running of original equipment is ensured, and a turboset and the circulating water system are required to be stopped only in a process of communicating the new circulating water pool with the old circulating water pool. According to the method, the stopping time is greatly shortened, economic loss caused by stopping is reduced, and process design requirements are met; the communicating pipe is arranged between the new circulating water pool and the old circulating water pool, so that problems about water level balance between the new circulating water pool and the old circulating water pool are solved, and overflow of the circulating water pools and waste of water resources are avoided.

The invention discloses a forming method of a large-diameter thin-walled stainless steel barrel. The method includes the following steps that firstly, groove pre-bending and machining are conducted; secondly, stainless steel plates are hoisted to tool supports and fixed to the tool supports; thirdly, turnover is conducted; fourthly, assembling and longitudinal joint welding are conducted; fifthly, weld joint correction is conducted; and sixthly, the tool supports are detached. By means of the large-diameter thin-walled stainless steel barrel formed through the method, hoisting difficulty can be eliminated, ferrite pollution is avoided, the barrel does not need to be overturned, and it is ensured that the circular degree of the barrel meets the process design requirement.

A hybrid integrated circuit module and its manufacturing method, the manufacturing method comprising: making a substrate, a heat sink, and a glass fiber board with through holes at preset positions, and covering one surface of the substrate with an insulating layer; The glass fiber board and the radiator are arranged on the surface of the insulating layer; the circuit wiring layer is arranged on the surface of the glass fiber board; power elements and non-power elements are respectively arranged on the radiator and corresponding positions of the circuit wiring layer; Metal wires are connected between the circuit wiring layer, the heat sink, the power element, and the non-power element. Improve the contact reliability of the bonding point, shorten the length of the bonding line and reduce the height difference of the bonding line can effectively reduce the probability of line punching during molding, so that the manufacturing pass rate and long-term reliability of the intelligent power module are improved. promote.

The invention provides a packaging structure. The packaging structure comprises a semiconductor chip, and a conductive connection post which comprises opposite first and second sides. The first side of the conductive connection post is fixed with the surface of the semiconductor chip. The packaging structure further comprises a carrier board which is opposite to the semiconductor chip. The conductive connection post is located between the semiconductor chip and the carrier board, and the second side faces the carrier board. The packaging structure further comprises a solder layer located between the surface of the carrier board and the second side. The performance of the packaging structure is improved.

The invention provides a press filter control system based on the industrial field communication technology. The press filter control system is characterized in that a protocol module is inserted into a frame of a press filter PLC, and connected to an industrial exchanger through an Ethernet twisted-pair cable; an auxiliary system PLC and an OS station are respectively connected to the industrial exchanger through the Ethernet; a mine back valve is designed to be mounted on a process pipe line; a signal of an auxiliary device is sent to the press filter PLC through the auxiliary system PLC; meanwhile, another signal sent by the press filter PLC is sent to the auxiliary system PLC; according to a working process of press filters, the real-time control of the auxiliary device can be completed so as to reduce moisture content in finished ore, improve amount of ore discharge and realize the purposes of cyclic utilization of filter liquor in a feeding process of the press filters, and the efficient and safe transportation of finished ore. According to the press filter control system provided by the invention, problems that a wiring work amount is large, and the control process of an auxiliary system is simple, which is not conducive to reasonable optimization use of the press filters to the utmost extent in the prior art are solved.

A semiconductor device and its forming method, wherein the method includes: forming a dielectric layer on a semiconductor substrate and a fin, the dielectric layer has a groove exposing the fin, and the groove includes a first groove region exposing part of the fin and the second groove area exposing part of the fin, the direction from the center of the first groove area to the center of the second groove area is perpendicular to the extending direction of the fin; forming a first work function layer on the fin at the bottom; forming a first covering layer in the first groove area of ​​the trench, the first covering layer being located on the first work function layer of the first groove area and exposing the second groove area The first work function layer of the second groove area is etched and removed with the first cover layer as a mask; after the first work function layer of the second groove area is etched and removed, the second groove of the trench A second covering layer is formed in the region; the second covering layer and the first covering layer are removed by etching. The method improves the performance of semiconductor devices.

A semiconductor device and a method for forming the same, wherein the method includes: providing a semiconductor substrate with initial fins on the semiconductor substrate; forming a gate structure material layer on the semiconductor substrate and the initial fins, the gate The top surface of the pole structure material layer is higher than the top surface of the initial fin; a groove is formed in the gate structure material layer and the initial fin, and the groove is along a direction perpendicular to the extending direction of the initial fin and parallel to the semiconductor substrate. The direction of the bottom surface runs through the initial fin so that the initial fin forms a fin; an isolation layer is formed in the groove, the top surface of the isolation layer is higher than the top surface of the fin; and the gate structure material is etched layer, so that the gate structure material layer forms a gate structure on both sides of the isolation layer, the gate structure straddles the fin and covers part of the top surface and part of the sidewall surface of the fin. The method improves the isolation performance of the semiconductor device.