Secondary nonlinear magnetic control memristor simulator based on current transmitter

A current transmitter, non-linear technology, applied in the direction of instruments, electrical digital data processing, CAD circuit design, etc., to achieve the effect of simple structure and easy realization

CN110046472APending Publication Date: 2019-07-23CHENGDU NORMAL UNIV
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
Publication Date
2019-07-23

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Abstract

The invention discloses a secondary nonlinear magnetic control memristor simulator based on a current transmitter, which comprises an integral operation circuit, a multiplier M1 and a resistor R2, andthe integral operation circuit comprises a current transmitter U1, a resistor R1 and a capacitor C1. The electrical characteristics of the ports a and b of the secondary nonlinear magnetic control memristor simulator are equivalent to the port characteristics of a magnetic control memristor, the input current of the internal integral operation circuit is 0, and circuits such as a voltage followerused for avoiding the load effect do not need to be connected to the input end in series. According to the secondary nonlinear magnetic control memristor simulator, an absolute value operation circuit is not needed, only five circuit components are needed, the structure is simple, implementation is convenient, and the secondary nonlinear magnetic control memristor simulator can be widely appliedto design of various memristor circuits (circuits such as memristor chaos, memristor bridge synapses and memristor neurons).
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Description

technical field

[0001] The patent of the present invention relates to the field of new circuit element simulator construction, in particular to a secondary nonlinear magnetron memristor simulator based on a current transmitter. Background technique

[0002] In 1971, Professor Cai Shaotang of the University of California, Berkeley, starting from the completeness of circuit theory, predicted that in addition to resistance, capacitance and inductance, there is a fourth basic circuit element that characterizes the relationship between charge and magnetic flux, and named it memory. Resistor (memristor). In 2008, HP Labs published research results in the journal Nature, announcing the physical realization of a two-terminal device with memristor characteristics. The breakthrough of Hewlett-Packard Labs has aroused widespread concern in academia and industry, setting off an upsurge of people's research on memristors.

[0003] A memristor is a non-linear resistor whose resistance v...

Examples

Embodiment Construction

[0017] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0018] Such as figure 1 As shown, the quadratic nonlinear magnetron memristor simulator based on the current conveyor includes an integral operation circuit, a multiplier M 1 and resistor R 2 , the integral operation circuit includes a current conveyor U 1 , resistance R 1 and capacitance C 1 ;Current conveyor U 1 The y pin, the multiplier M 1 The input terminal of the m pin and the resistor R 2 One end of both is connected to port a; the current transmitter U 1 x pin with resistor R 1 Connected to one end of the resistor R 1 The other end of the ground; the current transmitter U 1 the z pin with a capacitor C 1 Connected to one end of the capacitor C 1 The other end of the ground; the current transmitte...