Powder atomic layer deposition device and deposition method and application for same

An atomic layer deposition, powder technology, applied in coating, metal material coating process, gaseous chemical plating and other directions, can solve the problems of high powder loss rate, single growth form, high cost, improve utilization efficiency, equipment manufacturing Simple, low-cost coating effect

Active Publication Date: 2019-07-26
NANKAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] (1) The current technology mostly adopts the flow bed type, which has poor controllability
[0007] (2) The existing technology adopts the growth process and equipment of uninterrupted pumping, which wastes the precursor source and the film growth efficiency is low; there are few types of films that can be grown, and the growth

Method used

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  • Powder atomic layer deposition device and deposition method and application for same
  • Powder atomic layer deposition device and deposition method and application for same
  • Powder atomic layer deposition device and deposition method and application for same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0086] like figure 1 As shown, the powder atomic layer deposition equipment provided by the embodiment of the present invention is provided with a heatable main chamber 1; the heatable main chamber 1 is fixed with a mechanical transmission shaft 3 through a bearing, and a powder growth chamber is clamped on the mechanical transmission shaft 3. Bed 5, powder growth bed 5 is covered with powder sample 6, and the upper end of mechanical transmission shaft 3 is provided with vibration rotator 2.

[0087] The left end of the heatable main cavity 1 is fixed with a heatable gas pipeline 11 through a flange, and a powder filter 7 is arranged at the connection between the heatable gas pipeline 11 and the heatable main cavity 1 .

[0088] The heatable gas pipeline 11 is connected to the solenoid valve 9 through a ferrule, the solenoid valve 9 is connected to the vacuum pump 10 through the heatable gas pipeline 11 , and a residual gas analyzer 8 is arranged on the upper end of the soleno...

Embodiment 2

[0094] like figure 2 As shown, the preparation of the aluminum nitride thin film provided by the embodiment of the present invention is provided with: a heatable main cavity 1 .

[0095] The heatable main cavity 1 is fixed with a mechanical transmission shaft 3 through bearings, and the mechanical transmission shaft 3 is clamped with a powder growth bed 5, and the powder growth bed 5 is covered with powder samples 6, and the upper end of the mechanical transmission shaft 3 is provided with a vibrating rotator 2 .

[0096] The left end of the heatable main chamber 1 is fixed with a heatable gas pipeline 11 through a flange, a powder filter 7 is arranged at the connection between the heatable gas pipeline 11 and the heatable main chamber 1, and the left end of the powder filter 7 is provided with a Plasma generator 14.

[0097] The plasma generator 14 is connected with the residual gas analyzer 8 through the heatable gas pipeline 11, the plasma generator 14 is connected with ...

Embodiment 3

[0102] Based on the device of Example 2, the present invention provides a method of using the aluminum nitride film preparation device to prepare the aluminum nitride film, the method of the aluminum nitride film comprising:

[0103] The first step is to determine the growth temperature of the powder sample and keep the heatable main cavity at the corresponding growth temperature;

[0104] In the second step, the precursor 1 introduced into the growth film is adsorbed on the surface of the powder in the form of chemical adsorption;

[0105] The third step is to extract excess precursor 1, the plasma generator works, and then feed precursor 2 to make precursor 2 react with precursor 1 chemically adsorbed on the surface of the powder;

[0106] In the fourth step, the plasma stops working, and the excess precursor 2 is extracted to complete the two-phase compound growth process.

[0107] Another object of the present invention is to provide a deposited aluminum nitride film util...

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Abstract

The invention belongs to the field of atomic layer deposition and discloses a powder atomic layer deposition device and a deposition method and application for the same. A heatable main cavity of thepowder atomic layer deposition device is fixed with a mechanical transmission shaft by a bearing, a powder growth bed is in clamped connection to the mechanical transmission shaft, a powder sample ispaved on the powder growth bed, and a vibrating rotation device is disposed on the upper end of the mechanical transmission shaft; a heatable gas pipeline is fixed on the left end of the heatable maincavity by a flange, and a powder filter is disposed at a joint between the heatable gas pipeline and the heatable main cavity; and the heatable gas pipeline is connected to an electromagnetic valve by a clamping sleeve, the electromagnetic valve is connected to a vacuum pump by the heatable gas pipeline, and a residual gas analyzer is disposed on the upper end of the electromagnetic valve. The device disclosed by the invention has the beneficial effects that an inlet source and air suction are configured on the same end; thin film growth efficiency is high, growth of different thin film materials is realized, and stability of the grown thin film materials is high; and overall device manufacture is simple, and utilization efficiency of a precursor source is increased.

Description

technical field [0001] The invention belongs to the technical field of atomic layer deposition, and in particular relates to a powder atomic layer deposition equipment and a deposition method and application thereof. Background technique [0002] At present, the existing technology adopts the growth process and equipment of uninterrupted pumping, which wastes the precursor source and the film growth efficiency is low; there are few types of films that can be grown, and the growth form is single; the powder loss rate is large, the structure is complex and the cost is high; The prior art mostly adopts the flow bed type, which has poor controllability. [0003] For the existing fluidized bed powder ALD growth equipment, the powder is in a fluid state. When the superfine powder is coated on the surface, a powder filter with ultra-small holes must be equipped at the lower end of the reaction chamber or the suction end, which will be extremely difficult. Large impact on the rate ...

Claims

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Application Information

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IPC IPC(8): C23C16/34C23C16/455C23C16/442
CPCC23C16/34C23C16/4417C23C16/442C23C16/45544
Inventor 董红孙勇
Owner NANKAI UNIV
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