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Zener diode as well as production method thereof

A technology of Zener diode and manufacturing method, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem that Zener diode cannot be used as a chip reference voltage, etc., and achieve the effect of wide voltage coverage

Inactive Publication Date: 2019-07-30
石鑫
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A zener diode of this precision obviously cannot be used as a reference voltage for the chip

Method used

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  • Zener diode as well as production method thereof
  • Zener diode as well as production method thereof
  • Zener diode as well as production method thereof

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Embodiment Construction

[0022] In order to make the objectives, technical solutions and beneficial technical effects of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described implementation Examples are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0023] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, or the orientation or posi...

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Abstract

The invention provides and relates to a Zener diode as well as a production method thereof. The method comprises the following steps: providing a substrate of a first conduction type; forming a buriedlayer of a second conduction type in the substrate; and forming a dielectric layer on the upper surface of the substrate and forming a doping area of the second conduction type in a substrate area above the buried layer, wherein the doping area comprises a first doping area and a second doping area surrounding the periphery of the first doping area at intervals, and the first doping area and oneend of the second doping area extend into the buried layer from the surface of the substrate. The method provided by the invention can improve reverse breakdown accuracy of the Zener diode.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a Zener diode and a manufacturing method thereof. Background technique [0002] Zener diode is a kind of low-voltage Zener diode. When the device breaks down in reverse, the breakdown mode includes Zener breakdown and avalanche breakdown. Compared with diodes in pure avalanche breakdown mode, it has a lower and more stable breakdown. Wear voltage Vz (usually 4-7V). [0003] Before the Zener diode reaches the reverse breakdown current, the leakage current is very small, and it is basically in the cut-off state. After reaching the breakdown voltage, the current rises rapidly, and with the increase of the reverse current, the device voltage drop remains basically unchanged. If the zener diode is used as a voltage regulator, the attached load voltage will be kept at almost a constant value, and will not be affected by the attached load current or the voltage variation on the ...

Claims

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Application Information

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IPC IPC(8): H01L21/329H01L29/866H01L29/06H01L21/265
CPCH01L21/26513H01L29/0615H01L29/66106H01L29/866
Inventor 石鑫
Owner 石鑫