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Target material doped with metal Na, preparation method of back electrode layer and cigs solar cell

A technology of solar cells and back electrodes, applied in metal material coating process, coating, circuit, etc., to achieve the effect of improving energy conversion efficiency, simple operation, and guaranteed performance

Active Publication Date: 2021-03-19
SUNFLARE NANJING ENERGY TECH LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the above-mentioned analysis, the present invention aims to provide a target material doped with metal Na, a back electrode layer preparation method and a CIGS solar cell, to solve the problem that doping a Na compound in the CIGS layer or the back electrode layer in the prior art will introduce new The problem of impurity elements

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  • Target material doped with metal Na, preparation method of back electrode layer and cigs solar cell
  • Target material doped with metal Na, preparation method of back electrode layer and cigs solar cell
  • Target material doped with metal Na, preparation method of back electrode layer and cigs solar cell

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Embodiment 1

[0046] This embodiment provides a target material doped with metal Na, including a first target material and a second target material, the structure and size of the first target material and the second target material can be the same or different, see Figure 9 to Figure 10 , the first target includes a stacked first Mo layer 9 and a first Na-doped layer 10, the second target includes a stacked second Mo layer 9' and a second Na-doped layer 10', the first Mo layer 9 and the second Mo layer 9' are made of metal Mo, the first Na-doped layer 10 and the second Na-doped layer 10' are made of metal Mo doped with metal Na, and the Na of the first Na-doped layer 10 The doping amount is larger than the Na doping amount of the second Na-doped layer 10'.

[0047] The above-mentioned target material can be used to form a single-layer back electrode layer and a composite back electrode layer of at least two layers. Exemplarily, on the premise of not adjusting the strength of the sputterin...

Embodiment 2

[0051] This embodiment provides a preparation method of the back electrode layer, which is prepared by using the target material doped with metal Na provided in the first embodiment. The preparation method of the electrode sublayer 21, the second electrode sublayer 22, the third electrode sublayer 23 and the fourth electrode sublayer 24 includes the following steps:

[0052] Step 1: placing the first Mo layer 9 and / or the second Mo layer 9' in the film-forming area, and sputtering on the substrate to obtain the first electrode sub-layer 21 of pure metal Mo;

[0053] Step 2: placing the second Na-doped layer 10' in the film-forming region, and sputtering on the first electrode sub-layer 21 to obtain the second electrode sub-layer 22 with the lowest Na doping amount;

[0054] Step 3: placing the first Na-doped layer 10 and the second Na-doped layer 10' in the film-forming region, and sputtering on the second electrode sub-layer 22 to obtain a third electrode sub-layer 23 with a ...

Embodiment 3

[0058] This embodiment provides a CIGS solar cell doped with metal Na, see Figure 1 to Figure 7 , including a substrate 1 and a back electrode layer 2, a CIGS layer 3, a buffer layer 4 and a transparent surface electrode layer 5 sequentially stacked on the substrate 1, wherein the back electrode layer 2 is doped with metal Na, from the substrate 1 to the transparent surface electrode In the direction of layer 5, the doping amount of Na in the back electrode layer 2 increases gradually. That is to say, the back electrode layer 2 can have a structure of at least two layers. The Na doping amount of the layer is higher than the Na doping amount of the electrode sublayer remote from the transparent surface electrode layer 5 . Specifically, the Na doping amount in the multilayer electrode sublayers can be increased in a gradient manner in an equal difference and equal ratio.

[0059] It should be noted that in practical applications, although the thickness of the back electrode la...

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Abstract

The invention discloses a metal Na doped target, a back face electrode layer preparation method and a CIGS solar cell, and belongs to the CIGS solar cell technology. The problems that in the prior art, a Na compound is doped in a CIGS layer or a back face electrode layer so that a new impurity element can be introduced. The metal Na doped target includes a first target and a second target, the first target includes a first Mo layer and a first Na doped layer which are stacked, and the second target includes a second Mo layer and a second Na doped layer which are stacked; the first Mo layer andthe second Mo layer are made of metal Mo, and the first Na doped layer and the second Na doped layer are made by doping metal Na in the metal Mo; and the Na doping amount of the first Na doped layeris greater than the Na doping amount of the second Na doped layer. The metal Na doped target, the back face electrode layer preparation method and the CIGS solar cell can be used for solar power generation.

Description

technical field [0001] The invention relates to a CIGS solar cell technology, in particular to a target material doped with metal Na, a method for preparing a back electrode layer and a CIGS solar cell. Background technique [0002] CIGS solar cell is a kind of clean energy, energy-saving and environment-friendly. It is mainly composed of Cu (copper), In (indium), Ga (gallium), and Se (selenium). It has strong light absorption ability, good power generation stability, and high conversion efficiency. It has the advantages of long power generation time during the day, high power generation capacity, low production cost and short energy recovery cycle. [0003] In the prior art, a CIGS solar cell usually includes a substrate and a back electrode layer, a CIGS layer, a buffer layer, and a transparent surface electrode layer stacked on the substrate in sequence, wherein the overall composition of the target used to form the back electrode layer is uniform and is a single Layer s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/08C23C14/18C23C14/34C23C14/35H01L31/0224H01L31/048H01L31/0749
CPCC23C14/086C23C14/185C23C14/3407C23C14/352H01L31/022441H01L31/048H01L31/0749Y02E10/541
Inventor 王磊张准
Owner SUNFLARE NANJING ENERGY TECH LTD
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