Backlit image sensor and manufacturing method thereof

An image sensor and back-illuminated technology, which is applied in the field of image sensors, can solve the problem of larger chip occupation area, achieve the effect of reducing chip occupation area and improving discharge sensitivity

Inactive Publication Date: 2019-08-02
HUAIAN IMAGING DEVICE MFGR CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, providing an array of backside contact holes around the pixel area of ​​the back-

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  • Backlit image sensor and manufacturing method thereof
  • Backlit image sensor and manufacturing method thereof
  • Backlit image sensor and manufacturing method thereof

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Embodiment Construction

[0020] Various exemplary embodiments of the present disclosure will now be described in detail with reference to the accompanying drawings. It should be noted that relative arrangements of components and steps, numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present disclosure unless specifically stated otherwise.

[0021] The following description of at least one exemplary embodiment is merely illustrative in nature and in no way intended as any limitation of the disclosure, its application or uses.

[0022] Techniques, methods and devices known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, such techniques, methods and devices should be considered part of the Authorized Specification.

[0023] In all examples shown and discussed herein, any specific values ​​should be construed as illustrative only, and not as limiting. Therefore, other examples of the exemplary ...

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Abstract

The invention relates to a backlit image sensor and a manufacturing method thereof. The backlit image sensor comprises a wafer stack which comprises a first wafer including a first substrate and a first wiring layer arranged on the first substrate, wherein the first substrate comprises a pixel region and a peripheral region around the pixel region; a second wafer including a second substrate and asecond wiring layer arranged on the second substrate; and a connecting layer arranged between the first wiring layer of the first wafer and the second wiring layer of the second wafer; a plurality ofthrough holes which extend through the first wafer and the connecting layer to the second wafer in the peripheral region of the first substrate; a first metal material which is arranged in the plurality of through holes; a contact hole which is arranged on the first metal material in at least one of the plurality of through holes; and a recessed region which is arranged on the pixel region of thefirst substrate and forms the window of the pixel region; and a second metal material layer which is arranged on the contact hole of at least one through hole and the window of the pixel region.

Description

technical field [0001] The present disclosure relates to image sensors, and more particularly, to back-illuminated image sensors and methods of manufacturing the same. Background technique [0002] In back-illuminated image sensors, a metal grid (for example, a tungsten fence structure) is usually used to isolate the pixels (specifically, the color filters of the pixels) in the back-illuminated image sensor to prevent interference between pixels. crosstalk. [0003] In addition, it is generally necessary to provide backside contact holes around the pixel area of ​​the back-illuminated image sensor (the area in which the pixels of the back-illuminated image sensor are formed) so that the metal grid is in contact with the semiconductor material of the back-illuminated image sensor, A discharge path through the semiconductor material is thereby achieved, thus avoiding problems with electrostatic discharge (ESD). [0004] However, due to the poor conductivity of the semiconduc...

Claims

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Application Information

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IPC IPC(8): H01L27/146
CPCH01L27/14627H01L27/1463H01L27/14636H01L27/1464H01L27/14683H01L27/14685H01L27/1469
Inventor 管斌张东亮陈世杰黄晓橹
Owner HUAIAN IMAGING DEVICE MFGR CORP
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