ESD transient state detection circuit

Abstract

The invention relates to the electronic technique, in particular to an ESD transient state detection circuit used for static leakage protection. The ESD transient state detection circuit comprises a driving network 1 composed of a driving resistor 11 and a driving capacitor 12, and a control network 2 composed of an inverter PMOS tube 21 and an inverter NMOS tube 22. The ESD transient state detection circuit is characterized in that a feedback network 3 is further included and composed of a switch tube and a feedback resistor 31, the input end, connected with the control network 2, of the switch tube and one end, namely the excitation end, of the feedback resistor 31 are connected with the output end of the control network 2, and the other end of the feedback resistor 31 is grounded. The ESD transient state detection circuit has the advantages that the occupied space of a chip can be effectively reduced, stability of output voltages of the chip is improved, the breakover time of the chip is prolonged, evenness of output voltages of the circuit is improved, a clamping device can be started more quickly, additional mask plates do not need to be added, and the occupied space of the chip can be further reduced. The ESD transient state detection circuit is especially suitable for detection of ESD pulses.

Description

Technical field [0001] The present invention relates to electronic technology, and in particular to a transient detection circuit in electrostatic discharge (ElectroStatic Discharge, ESD) protection. Background technique [0002] Electrostatic discharge is a common phenomenon in nature. Static electricity is a deadly threat to integrated circuit chips. It can generate large currents in a short time and cause irreversible damage to integrated circuit chips. According to statistics, the semiconductor manufacturing industry causes billions of dollars in economic losses every year due to electrostatic discharge. Therefore, ESD protection design has also become an indispensable link in integrated circuit design. However, there is an irreconcilable contradiction between the ESD resistance of the integrated circuit chip itself and the development direction of the integrated circuit. [0003] With the improvement of integrated circuit manufacturing process, chip size is getting smaller ...

AI Technical Summary

Problems solved by technology

But this circuit has a big disadvantage, that is, in order to obtain an ideal on-time, the resistance and capacitance should be large enough (for example, the resistance is 10KΩ, the capacitance is 10pF), which will inevitably occupy a large chip area.

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