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MOS tube bridge circuit driving circuit, driving method and energy storage device

A technology of MOS tubes and drive circuits, which is applied in the field of drive circuits and drive methods of MOS tube bridge circuits and energy storage equipment, and can solve problems such as inconsistent turn-on and turn-off times, different current amplification capabilities, and product damage.

Pending Publication Date: 2019-08-02
SHENZHEN CLICK TECH +4
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current amplification capabilities of the two triodes in the reverse control circuit are different and the turn-on and turn-off times are inconsistent, which may easily cause the output of the driver chip to turn on and turn off the complementary drive signals of the upper and lower MOS transistors at the same time, thus causing the upper and lower MOS transistors of the H bridge to pass through , making the product damaged

Method used

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  • MOS tube bridge circuit driving circuit, driving method and energy storage device
  • MOS tube bridge circuit driving circuit, driving method and energy storage device
  • MOS tube bridge circuit driving circuit, driving method and energy storage device

Examples

Experimental program
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Effect test

no. 1 example

[0040] refer to figure 1 , the MOS tube bridge circuit 100 of this embodiment includes two half bridges and a driving circuit 200, and the two half bridges form an H bridge. The driving circuit 200 is used to drive the H-bridge so that the H-bridge can control the load. The line where the H bridge is located is the H bridge power line. In other embodiments, the MOS transistor bridge circuit includes a half bridge.

[0041] Each half-bridge includes two MOS transistors, namely an upper bridge arm MOS transistor and a lower bridge arm MOS transistor. For the H-bridge, it includes a left upper bridge arm MOS transistor Q12, a left lower bridge arm MOS transistor Q14, a right upper bridge arm MOS transistor Q13 and a right lower bridge arm MOS transistor Q15. Among them, the line where the MOS transistor Q12 of the left upper bridge arm is located and the line where the MOS transistor Q14 of the left lower bridge arm is located are high-frequency MOS tube lines, and the line wh...

no. 2 example

[0081] This embodiment provides an energy storage device, including the above driving circuit 200 and at least one half bridge.

[0082] The energy storage device in this embodiment is specifically a 500W portable energy storage new energy product, and the product specifications are:

[0083] 500WH 4 strings 17 and a total of 68 lithium iron 18650 1C (36AH) discharge lithium battery energy storage equipment, battery voltage 12.4V to 16.8VDC, inverter output voltage 230V / 50Hz / 500W;

[0084] The charging can meet the 12VDC charging of the car cigarette lighter, and can be charged by the 15VDC voltage of the adapter and the 10V to 25VDC solar panel outdoors or indoors;

[0085] The inverter output is a pure sine wave output, which can meet the output of 100V to 230VAC, 50 / 60Hz.

no. 3 example

[0087] This embodiment provides an energy storage device, including a processor, a memory, and one or more programs, wherein the one or more programs are stored in the memory and configured to be executed by the processor, and the one or more programs include Instructions for executing the driving method described above.

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PUM

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Abstract

The invention discloses an MOS tube bridge circuit driving circuit, a driving method and an energy storage device. The driving circuit comprises a single chip microcomputer, a half bridge driving circuit, a gate circuit, a bleeder circuit and a discharging circuit, wherein the half bridge driving circuit comprises a driving chip with dead time control. The driving method comprises steps: at leastone group of complementary sinusoidal pulse width modulated driving signals is generated, and the dead time of the sinusoidal pulse width modulated driving signals is set; the group of complementary sinusoidal pulse width modulated driving signals is amplified and converted; the amplified and converted signals are transmitted to the MOS tube to drive the MOS tube; voltage between the gate and thesource when the MOS tube is cut off is discharged; and capacitance between the gate and the source when the MOS tube is cut off is discharged. The energy storage device comprises one or more programsfor performing the driving method. The work of the half bridge can be effectively controlled, and the risk of direct conduction of upper and lower MOS tubes of the half bridge under abnormal conditions can be reduced.

Description

technical field [0001] The present application relates to the technical field of MOS tube bridge circuits, in particular to a driving circuit, a driving method and an energy storage device for a MOS tube bridge circuit. Background technique [0002] New energy storage products are equipped with a MOS tube bridge circuit. The MOS tube bridge circuit includes an H bridge, and the H bridge includes four MOS tubes. New energy storage products need to drive the H-bridge during the working process. Generally, a common MCU (Microcontroller Unit, micro control unit) having a pair of complementary driving output ports executes a table look-up algorithm of the software to output the complementary driving signal. After the complementary drive signal is reversed by the reverse control circuit including two triodes, the reverse signal is amplified by the driver chip, thereby generating two PWM (Pulse Width Modulation, pulse width) that make the upper and lower MOS transistors complement...

Claims

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Application Information

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IPC IPC(8): H02M1/38H02M1/088
CPCH02M1/38H02M1/088
Inventor 刘巍李统成周明亮
Owner SHENZHEN CLICK TECH