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A pixel unit circuit, image processing method, and storage medium

A pixel unit and circuit technology, applied in the field of image processing, can solve problems such as improving random noise of sub-wavelength pixels, and achieve the effect of reducing random noise and reducing the probability of capture

Active Publication Date: 2021-10-08
GUANGDONG OPPO MOBILE TELECOMM CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The existing amplifier tube uses a source follower, and the structure of its MOS field effect tube is as follows: figure 1 As shown, the gate of the source follower is composed of silicon-silicon dioxide, wherein the silicon dioxide layer is in contact with the P-epi, so that the highest potential energy of the channel of the source follower is affected by the silicon dioxide surface, and then Improved random noise for subwavelength pixels

Method used

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  • A pixel unit circuit, image processing method, and storage medium
  • A pixel unit circuit, image processing method, and storage medium
  • A pixel unit circuit, image processing method, and storage medium

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Experimental program
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Embodiment 1

[0039] An embodiment of the present application provides a pixel unit circuit, which is applied to a CMOS image sensor, such as figure 2 As shown, the pixel unit circuit includes:

[0040] Photodiode PD column;

[0041] A buried channel source follower BSF connected to the PD column, a layer of n region is implanted between the n+ region corresponding to the source and drain of the BSF, and the gate of the BSF is arranged on the n region;

[0042] Wherein, the PD column is used to absorb at least one color light corresponding to RGB, and convert the corresponding optical signal into an electrical signal;

[0043] The BSF is used to amplify the electrical signal.

[0044] The pixel unit circuit provided by the embodiment of the present application is applicable to a scene where a CMOS image sensor is used to process an image of a collected light signal to obtain an image corresponding to the light signal.

[0045] In the embodiment of the present application, the CMOS image...

Embodiment 2

[0071] An embodiment of the present application provides an image processing method, which is applied to a CMOS image sensor composed of a pixel unit circuit. The pixel unit circuit includes a PD column and a BSF connected to the PD column through a transfer transistor, such as Figure 5 As shown, the method may include:

[0072] S101. Use the PD column to absorb at least one color light corresponding to RGB, and convert the corresponding optical signal into an electrical signal.

[0073] An image processing method provided in an embodiment of the present application is applicable to scenarios.

[0074] In the embodiment of the present application, PD columns of different sizes absorb a color light corresponding to different RGB, and the light is photoelectrically converted in the depletion region of the PD column, and the optical signal is converted into an electrical signal.

[0075] In the embodiment of the present application, the diameter of the PD column is determined b...

Embodiment 3

[0093] An embodiment of the present application provides a storage medium on which a computer program is stored. The computer-readable storage medium stores one or more programs. The one or more programs can be executed by one or more processors and applied to pixel In the unit circuit, the computer program realizes the image processing method described in the second embodiment.

[0094] Specifically, when the program instructions corresponding to an image processing method in this embodiment are read or executed by an electronic device, the following steps are included:

[0095] Use the PD column to absorb at least one color light corresponding to RGB, and convert the corresponding optical signal into an electrical signal;

[0096] transferring the electrical signal to an FD by using the transfer transistor, so that the FD can read the electrical signal;

[0097] The BSF is used to amplify the readout electrical signal to perform image processing on the amplified electrical ...

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Abstract

The embodiment of the present application provides a pixel unit circuit, an image processing method, and a storage medium. The pixel unit circuit includes: a photodiode PD column; a buried trench source follower BSF connected to the PD column, and the source and drain of the BSF A layer of n-region is injected between the corresponding n+ regions, and the gate of BSF is set on the n-region; among them, the PD column is used to absorb at least one color light corresponding to RGB, and convert the corresponding optical signal into an electrical signal; BSF , used to amplify electrical signals.

Description

technical field [0001] The present application relates to the field of image processing, and in particular to a pixel unit circuit, an image processing method, and a storage medium. Background technique [0002] An existing CMOS image sensor (CIS, CMOS Image Sensor) is composed of a pixel unit circuit and a CMOS circuit, wherein the pixel unit circuit includes a photosensitive diode and a CMOS pixel readout circuit. Compared with CCD image sensors, CMOS image sensors have better integration because they adopt CMOS standard manufacturing process, and can be integrated with other digital-analog operations and control circuits on the same chip, which is more adaptable to future development. [0003] According to the number of transistors contained in the pixel unit circuit of the existing CMOS image sensor, it is mainly divided into 3T structure and 4T structure. Among them, the CMOS pixel readout circuit of the 3T type CMOS image sensor includes a reset tube, an amplifier tub...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/357H04N5/374H04N5/378
CPCH04N25/60H04N25/76H04N25/75
Inventor 杨鑫
Owner GUANGDONG OPPO MOBILE TELECOMM CORP LTD