Mesa gallium arsenide-doped silicon blocking impurity band terahertz detector and manufacturing method thereof

Abstract

The invention provides a countertop type gallium arsenide doped silicon impurity band blocking terahertz detector and a manufacture method thereof. The detector is used for detecting terahertz radiation. The detector comprises a high conductivity gallium arsenide substrate which comprises an annular region and a countertop structure region. The countertop structure region is arranged in the middle of the annular region. An annular negative electrode is arranged in the annular region. A circular positive electrode is arranged on the surface of the countertop structure region. The detector provided by the invention has the advantages that the annular negative electrode is prepared on the lower surface of a countertop, which reduces the probability that photogenerated carriers are captured by defects in the high conductivity gallium arsenide substrate; the collection efficiency of the photogenerated carriers is enhanced; the annular negative electrode structure is used, which shortens the transmission path of the photogenerated carriers; the recombination probability of the photogenerated carriers is reduced; and the collection efficiency of the photogenerated carriers is further enhanced.

Description

technical field [0001] The invention belongs to the technical field of preparation of terahertz detector devices, in particular to a mesa-type gallium arsenide-doped silicon-doped barrier impurity band terahertz detector and a manufacturing method thereof, which are suitable for making gallium arsenide-doped detectors with high collection efficiency and high responsivity Silicon blocking impurities with terahertz detectors. Background technique [0002] The blocked impurity band (BIB) detector is a low-temperature terahertz detector, which needs to work in a low-temperature environment below 4K. It has broad application prospects in anti-terrorism security inspection, medical imaging, biomedicine, non-destructive testing, material identification, astronomical observation, remote sensing early warning and other fields. Barrier impurity band detectors can be divided into silicon-based and gallium arsenide-based. Silicon-based barrier impurity band detectors can achieve high-s...

AI Technical Summary

Problems solved by technology

The advantage of this mode is that the preparation process is simple, and the disadvantage is that the photogenerated carriers need to pass through the gallium arsenide high-conductivity substrate before being collected by the negative electrode. However, the current development of gallium arsenide substrate technology lags behind the traditional silicon technology. Defect density in GaAs substrates (~10 3 cm -2 order of magnitude) than silicon substrates (~10 2 cm -2 order of magnitude) is much higher, and these defects, as recombination centers, can trap photogenerated carriers passing through the substrate, thereby weakening the terahertz response current signal

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