Unlock instant, AI-driven research and patent intelligence for your innovation.

Solar cell and manufacturing method thereof

The technology of a solar cell and a manufacturing method, which is applied in the field of solar cells, can solve the problems of low conversion efficiency of solar cells and the like

Pending Publication Date: 2020-01-03
紫石能源有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The main purpose of this application is to provide a solar cell and its manufacturing method to solve the problem of low conversion efficiency of solar cells in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solar cell and manufacturing method thereof
  • Solar cell and manufacturing method thereof
  • Solar cell and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0075] The process of making a solar cell includes:

[0076] The substrate 10 is passed into the MOCVD equipment, and the H 2 Gas, raise the temperature to perform high-temperature cleaning on the substrate 10, the temperature is 1000°C, and the above-mentioned substrate 10 is a GaAs layer;

[0077] grow Al on the substrate 10 X Ga 1-X As, forming a back field layer 21, where x=0.25, the thickness of the back field layer 21 is 100 nm, and its growth temperature is 600° C.;

[0078] A base layer 22 is grown on the back field layer 21, and each periodic structure of the base layer 22 is composed of a highly doped first substructure layer 221 and a lowly doped second substructure layer 222 arranged in sequence, and each first substructure The doping concentration of layer 221 is 1e20 / cm 3 , the doping type is N type, the thickness is 30nm, and the doping concentration of each second substructure layer 222 is 1e18 / cm 3 , the doping type is N-type. The thickness is 30nm, the ...

Embodiment 2

[0091] The difference with embodiment 1 is:

[0092] In the first battery cell, the doping concentration of each first substructure layer is 1e18 / cm 3 , the doping type is N-type, the thickness is 1.5nm, and the doping concentration of each second substructure layer is 1e16 / cm 3 , the doping type is N-type. The thickness is 1nm, the thickness of the period formed by a first substructure layer and a second substructure layer is 2.5nm, the number of periods is 200, the total thickness of the base layer is 500nm, and the growth temperature of the base layer is between 800-1000°C between.

Embodiment 3

[0094] The difference with embodiment 1 is:

[0095] In the first battery cell, the doping concentration of each first substructure layer is 1e22 / cm 3 , the doping type is N type, the thickness is 50 nm, and each second substructure layer is an intrinsic layer. The thickness is 100nm, the thickness of the period formed by a first substructure layer and a second substructure layer is 150nm, the number of periods is 20, the total thickness of the base layer is 3000nm, and the growth temperature of the base layer is between 400-600°C .

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a solar cell and a manufacturing method thereof. The solar cell comprises a substrate and a plurality of cell units which are sequentially stacked on the surface of the substrate, wherein each cell unit comprises a back field layer, a base layer and an emission layer which are sequentially arranged in an overlapped mode, the base layers in the cell units are different, the doping type of the back field layer is the same as that of the base layer, the base layer and the emission layer form a PN junction, and at least one base layer is a superlattice structure layer comprising a plurality of stacked and same periodic structures; each periodic structure comprises a first sub-structure layer and a second sub-structure layer which are arranged in an overlapped mode, the doping type of the first sub-structure layer is the same as that of the second sub-structure layer, and the doping concentration of the first sub-structure layer is greater than that of the second sub-structure layer; or the first sub-structure layer is a doped layer, and the second sub-structure layer is an intrinsic layer. The solar cell is high in photoelectric conversion efficiency.

Description

technical field [0001] The present application relates to the field of solar cells, in particular, to a solar cell and a manufacturing method thereof. Background technique [0002] With the rise of the energy saving and emission reduction movement, the application of solar cells is becoming more and more extensive. Based on the characteristics of small mass, small volume, bendability and simple manufacturing process, solar cells are also more and more widely used. [0003] At present, a single-junction solar cell mainly includes a substrate, a base layer, and an emission layer. Among them, the lifetime of the minority carrier in the base layer has a great influence on the efficiency of the cell. Generally, the base layer needs to be doped to make it N-type or P-type structure layer, however, due to the difference between the doping source and the atomic size of the crystal itself, a large number of defects will be introduced during the doping process of the base layer, whic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0304H01L31/0352H01L31/0725H01L31/0735H01L31/18
CPCH01L31/0304H01L31/0352H01L31/0725H01L31/0735Y02E10/544Y02P70/50
Inventor 张新勇
Owner 紫石能源有限公司