High-beam-quality high-power output combining device of semiconductor laser

A semiconductor and high-beam technology, applied in the direction of semiconductor laser optical devices, semiconductor lasers, lasers, etc., can solve the problems that cannot be superimposed infinitely, generally no more than 50 layers, it is difficult to directly apply light sources, and the quality of output beams deteriorates, etc., to achieve Good beam quality level, achieve high power and high beam quality, and improve the effect of output power

Pending Publication Date: 2019-08-09
SUZHOU INST OF BIOMEDICAL ENG & TECH CHINESE ACADEMY OF SCI +1
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Problems solved by technology

However, due to the limitations of its waveguide structure and device packaging process, the beam quality in the direction of the fast and slow axes is quite different. For example, for ordinary cm bar bars, the quality of the beam in the direction of the slow axis is thousands of times that of the direction of the fast axis. result in poor output beam quality
Although the stack structure can achieve

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  • High-beam-quality high-power output combining device of semiconductor laser
  • High-beam-quality high-power output combining device of semiconductor laser

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Example Embodiment

[0031] Example 1

[0032] Reference figure 1 In this embodiment, the semiconductor laser beam combining device with high beam quality and high power output includes two beam combining subsystems: beam combining subsystem I and beam combining subsystem II with the same structure. The output sub-beams of the two beam combining subsystems are directly incident. To the second grating 7. The sub-beams output by the output mirror 6 of the beam combining subsystem I and the sub-beams output by the output mirror 6 of the beam combining subsystem II are directly incident on the second grating 7 of the pair of gratings. In order to obtain a higher diffraction efficiency for the sub-beam, the incident angle of the sub-beam is as close as possible to the Littrow angle of the second grating 7 at the blaze wavelength. The second grating 7 and the third grating 8 are placed in parallel, and the third grating 8 will effectively compensate for the dispersion generated by the second grating 7. T...

Example Embodiment

[0034] Example 2

[0035] Reference figure 2 In this embodiment, the number N of the beam combining subsystems is greater than 2 (the structures of the N beam combining subsystems are all the same, and the same as in the above embodiment, as shown in the elliptical dotted line), and the semiconductor laser has high beam quality The high-power output beam combining device also includes N mirrors 11, and the N mirrors 11 correspond to the N beam combining subsystems one to one, and are used to reflect the output sub-beams 10 of each beam combining subsystem to the second grating 7 . That is, the sub-beams 10 output by each beam combining subsystem are reflected on the second grating 7 through a mirror 11, and the dispersion of the second grating 7 makes the first-order diffracted beams of the sub-beams 10 of different wavelengths enter the third grating with the same parameters. The same position of the grating 8 is overlapped, and after diffraction by the third grating 8, the co...

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Abstract

The invention discloses a high-beam-quality high-power output combining device of a semiconductor laser. The combining device comprises N combining subsystems and a grating pair for combining sub beams outputted by the N combining subsystems. The combining subsystems include semiconductor laser stacks, fast-axis collimating mirrors, slow-axis collimating mirrors, transforming lenses, first gratings, and output mirrors, wherein the fast-axis collimating mirrors, the slow-axis collimating mirrors, the transforming lenses, the first gratings, and the output mirrors are arranged successively alongthe light path directions of emitted light of the semiconductor laser stacks. The grating pair includes a second grating and a third grating that are parallel with each other. According to the invention, an outer cavity and a semiconductor laser rear cavity surface form an outer-cavity semiconductor laser, so that different combining units are locked at different wavelengths; because of the dispersion effects of the gratings, laser beams emitted by all semiconductor laser stacks are overlapped in space to form one beam output, so that the output power is improved and the good beam quality level is kept; and the beam quality after combination is improved substantially and the high-power high-beam-quality combined beam outputting is realized.

Description

technical field [0001] The invention relates to the technical field of high-power semiconductor laser applications, in particular to a beam combining device with high beam quality and high power output of semiconductor lasers. Background technique [0002] Semiconductor laser is a kind of electro-optical conversion device with rapid development and wide scientific penetration in the past fifty years. It has important applications in industrial processing, military defense, optical communication and other fields. However, due to the limitations of its waveguide structure and device packaging technology, the beam quality in the direction of the fast and slow axes is quite different. For example, for ordinary cm bar bars, the quality of the beam in the direction of the slow axis is thousands of times that of the direction of the fast axis. resulting in poor output beam quality. Although the stack structure can achieve higher power output, limited by the small cross-sectional a...

Claims

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Application Information

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IPC IPC(8): G02B27/10H01S5/00
CPCG02B27/1006H01S5/005
Inventor 高静田玉冰陈建生姚文明王鹏檀慧明
Owner SUZHOU INST OF BIOMEDICAL ENG & TECH CHINESE ACADEMY OF SCI
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