Method for effectively improving production sufficient capacity rate of Nand flash memory equipment

Abstract

The invention discloses a method for effectively improving the production sufficient capacity rate of the Nand flash memory equipment, which comprises the following steps of S1, scanning the Nand Flash to obtain the BBT (bad block table) information of a flash memory chip; S2, downloading an FTL (flash translation layer) to a master controller, and writing the FTL into the Nand Flash at the same time; S3, enabling the FTL to perform system initialization according to the BBT information, and binding the blocks at the same position between planes or between CEs to form the superblocks; S4, carrying out logic space distribution, preferentially selecting a block individually lost in the bad super block to be used as a system block, and using other good super blocks to be used as the data blocks; and S5, storing the system information to the flash memory chip. According to the method, the good block individually lost in the bad super block is used as the system block, so that the block resources are fully utilized, the utilization rate is increased, meanwhile, the loss of a system to the good super block is reduced, and accordingly the available capacity of the user data storage is effectively improved, and the production sufficient capacity rate of the flash memory equipment is effectively improved.

Description

technical field [0001] The invention relates to the technical field of embedded storage using flash memory particles as storage media, in particular to a method for effectively improving the production capacity of Nand flash memory devices. Background technique [0002] Nand flash memory has been widely used in common electronic products due to its small size, light weight, strong shock resistance, low noise, high temperature resistance and low power consumption. Nand flash memory generally contains one or more LUNs (Logical units), and one CE controls one or more LUNs. A LUN is an individual that can independently process read, write, and erase commands and report status. A LUN is composed of one or more Planes. It is a series of block blocks. The unit of erasing is block, the block contains page, and the unit of reading and writing is page. Such as figure 1 One construction of Nand flash memory is shown. [0003] Due to the characteristics of the flash memory production...

AI Technical Summary

Problems solved by technology

[0005] According to the above BBT information, since the blocks in the same position of CE0 and CE1 will be bundled together to form a superblock (SB) for use, so at the super block level, super blocks 2, 3, and 4 are all bad blocks, and cannot be used later use, this will cause the product to lose a certain percentage of physical capacity, and this effect will be very obvious as the number of CEs increases

When FTL is initialized, it can only apply for a certain number of blocks from super block1, 5... these good blocks for system use, which also loses a certain amount of physical capacity, because each flash memory chip has only a limited number of blocks When the number of bad blocks plus the number of blocks occupied by FTL exceeds a certain number, the number of remaining blocks will be insufficient. The product is downgraded to 16GB products or 16GB products are downgraded to 8GB products, and so on, or an error is reported directly, which will affect the production capacity ratio and cause production loss

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