Pulsed magnetron sputtering and ion implantation combined composite surface modification method and device

Abstract

The invention provides a pulsed magnetron sputtering and ion implantation combined composite surface modification method and device. The pulsed magnetron sputtering and ion implantation combined composite surface modification method comprises the following steps of: firstly, generating plasma required for composite surface modification by using the pulsed magnetron sputtering; changing the pulse polarity at the end of the magnetron sputtering pulse, so that ions in the plasma still remaining in a vacuum chamber accelerate towards a direction departing from a target; and using a substrate as anegative electrode or placing the substrate on the path of ion bombardment to realize the composite surface modification of the substrate. The pulsed magnetron sputtering and ion implantation combinedcomposite surface modification method and device can improve the affinity of the substrate material to a thin-film material and the bonding force between a film layer and the substrate, can control the structure of the film, and can change the composition structure of a coating or the substrate before and after magnetron sputtering deposition film formation.

Description

Technical field [0001] The invention relates to a method and a device for surface modification of materials. Background technique [0002] Magnetron sputtering and ion implantation are the most widely used material surface modification methods in the industrial field, and they have been widely used in machinery, molds, optics, electronics, medicine and other fields. The pulse magnetron sputtering developed in recent years has greatly improved the ionization rate of magnetron sputtering. The omni-directional ion implantation technology overcomes the shortcomings that line-of-sight ion implantation can only be implanted from a specific direction. A lot of research and application work has been launched. [0003] Although pulsed magnetron sputtering improves the ionization rate of traditional magnetron sputtering, its process range is widened, the diffraction and activity are greatly increased, but the ion temperature is not high, so the bonding between the coating and the substrate ...

AI Technical Summary

Problems solved by technology

[0004] One of the purposes of the present invention is to provide a new surface modification method to achieve at least one of the effects of improving the bonding strength, manipulating the structure of the membrane, and solving the problem of shallow surface modification layer of ion implantation.

[0005] Another object of the present invention is to provide a new surface modification device to achieve at least one of the effects of improving the bonding strength, manipulating the structure of the membrane, and solving the problem of shallow surface modification layer of ion implantation.

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