Pulsed magnetron sputtering and ion implantation combined composite surface modification method and device

A composite surface, magnetron sputtering technology, applied in the direction of ion implantation plating, sputtering plating, coating, etc., can solve the problem of shallow surface modification layer of ion implantation, achieve simple structure, improve bonding strength, improve The effect of cohesion

Active Publication Date: 2019-08-20
BEIHANG UNIV
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Problems solved by technology

[0004] One of the purposes of the present invention is to provide a new surface modification method to achieve at least one of the effects of improving the bonding strength, manipulating the structure of the membrane, and solving the problem of shallow surface modification layer of ion implant...

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  • Pulsed magnetron sputtering and ion implantation combined composite surface modification method and device
  • Pulsed magnetron sputtering and ion implantation combined composite surface modification method and device
  • Pulsed magnetron sputtering and ion implantation combined composite surface modification method and device

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Embodiment Construction

[0026] Hereinafter, the embodiments of the composite surface modification method and device combining pulse magnetron sputtering and ion implantation of the present invention will be described with reference to the accompanying drawings.

[0027] The embodiments described herein are specific specific embodiments of the present invention, which are used to illustrate the concept of the present invention. They are all explanatory and exemplary, and should not be construed as limiting the embodiments of the present invention and the scope of the present invention. In addition to the implementations described here, those skilled in the art can also adopt other obvious technical solutions based on the claims and contents disclosed in the specification. These technical solutions include any changes to the implementations described herein. Obvious replacement and modified technical solutions.

[0028] The drawings in this specification are schematic diagrams to assist in explaining the co...

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Abstract

The invention provides a pulsed magnetron sputtering and ion implantation combined composite surface modification method and device. The pulsed magnetron sputtering and ion implantation combined composite surface modification method comprises the following steps of: firstly, generating plasma required for composite surface modification by using the pulsed magnetron sputtering; changing the pulse polarity at the end of the magnetron sputtering pulse, so that ions in the plasma still remaining in a vacuum chamber accelerate towards a direction departing from a target; and using a substrate as anegative electrode or placing the substrate on the path of ion bombardment to realize the composite surface modification of the substrate. The pulsed magnetron sputtering and ion implantation combinedcomposite surface modification method and device can improve the affinity of the substrate material to a thin-film material and the bonding force between a film layer and the substrate, can control the structure of the film, and can change the composition structure of a coating or the substrate before and after magnetron sputtering deposition film formation.

Description

Technical field [0001] The invention relates to a method and a device for surface modification of materials. Background technique [0002] Magnetron sputtering and ion implantation are the most widely used material surface modification methods in the industrial field, and they have been widely used in machinery, molds, optics, electronics, medicine and other fields. The pulse magnetron sputtering developed in recent years has greatly improved the ionization rate of magnetron sputtering. The omni-directional ion implantation technology overcomes the shortcomings that line-of-sight ion implantation can only be implanted from a specific direction. A lot of research and application work has been launched. [0003] Although pulsed magnetron sputtering improves the ionization rate of traditional magnetron sputtering, its process range is widened, the diffraction and activity are greatly increased, but the ion temperature is not high, so the bonding between the coating and the substrate ...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/48
CPCC23C14/35C23C14/48
Inventor 李刘合
Owner BEIHANG UNIV
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