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Method for measuring secondary electron emission coefficient of dielectric material

A technology of secondary electron emission and dielectric materials, applied in the field of physical electronics

Active Publication Date: 2019-08-20
INST OF HIGH ENERGY PHYSICS CHINESE ACADEMY OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Accurate and reliable measurement results

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  • Method for measuring secondary electron emission coefficient of dielectric material
  • Method for measuring secondary electron emission coefficient of dielectric material
  • Method for measuring secondary electron emission coefficient of dielectric material

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Embodiment Construction

[0030] The invention provides a new method for neutralizing the surface charge of a dielectric material and a corresponding method for testing the secondary electron emission coefficient. This method weakens the measurement error introduced by the charge accumulation effect, and then can measure the secondary electron emission coefficient of the dielectric material under different incident energies in an accurate and effective way. And this method can measure all the secondary electron emission coefficients of the sample material under different incident energies in one complete measurement. During the whole test process, there is no need to move the sample, replace the electronic structure and other operations. The operation is simple and convenient, and the test result is accurate. The neutralization method has a simple structure, a wide range of applications, and effectively prevents the accumulation of negative charges caused by excessive neutralization on the basis of full...

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Abstract

The invention discloses a method for measuring the secondary electron emission coefficient of a dielectric material. The method comprises the following steps that: 1) a to-be-measured dielectric material is arranged on a metal sample table; the output ports of the metal sample table, a grid mesh and a collector are connected with the input ports of an acquisition device, voltages applied by the metal sample table and the grid mesh are the same as the voltage of the emission opening of an electron gun, and the potential of the collector is higher than the potential of the metal sample table; 2)the parameters of the electron gun are adjusted, so that an electron beam spot irradiates the surface of the metal sample table and continuously irradiates the surface of the metal sample table for set time; 3) electron energy emitted by the electron gun is adjusted to be energy required to be tested, and the irradiation position of a primary electron beam is adjusted to the surface of the dielectric material, the electron gun is made to emit a pulse electron beam, pulse current I1, pulse current I2 and pulse current I3 of the closed circuits of the metal sample table, the grid mesh and the collector are measured and calculated, and the secondary electron emission coefficient delta of the dielectric material under current electron incident energy is calculated according to the formula that delta=(I2+I3) ) / (I1+I2+I3).

Description

technical field [0001] The invention belongs to the field of physical electronics, in particular to a method for testing the secondary electron emission coefficient of a dielectric material after using a pulsed electron gun to neutralize the positive charge on the surface of the dielectric material. Background technique [0002] The phenomenon that electrons (or ions) with a certain kinetic energy bombard the surface of a solid material, causing electrons inside the material to be emitted from the surface of the material, is called the secondary electron emission phenomenon of the material. [0003] The intensity of the electron current that bombards the surface of the material is called the primary electron current I p , the intensity of the electron current emitted from the material surface is called the secondary electron current I s , usually the secondary electron emission coefficient δ of the material is defined as I s with I p Ratio. If δ is less than 1, it means ...

Claims

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Application Information

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IPC IPC(8): G01N23/22
CPCG01N23/22
Inventor 温凯乐刘术林闫保军王玉漫
Owner INST OF HIGH ENERGY PHYSICS CHINESE ACADEMY OF SCI
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