Production method and application of II-III-V-VI alloy quantum dots

Abstract

The invention relates to a production method of II-III-V-VI alloy quantum dots and application of the II-III-V-VI alloy quantum dots. The production method comprises the steps of (1) mixing a first precursor which contains a group IIB element, a second precursor which contains a group IIIA element, a third precursor which contains a group VA element, a fourth precurosr which contains a group VIA element and a ligand to form a precursor solution A, and heating the precursor solution A to make the precursor solution A subjected to reaction to form a II-III-V-VI nanocluster compound solution; and(2) mixing the II-III-V-VI nanocluster compound solution and an activator, and carrying out reaction to obtain the II-III-V-VI alloy quantum dots. According to the production method of the II-III-V-VI alloy quantum dots and application of the II-III-V-VI alloy quantum dots, the four precursors which have different activity are reacted to form a II-III-V-VI nanocluster compound which has mild reaction activity, then the II-III-V-VI nanocluster compound and the activator are mixed, and through the activator, the nucleation and growing speed and the energy band structure of the II-III-V-VI alloyquantum dots are adjusted, so that the II-III-V-VI alloy quantum dots which are even in size and component and have few luminescence defects are obtained, and the II-III-V-VI alloy quantum dots are narrow in fluorescence half-peak width and high in quantum efficiency, and can be applied in a photoelectric device better.

Description

technical field [0001] The invention relates to the technical field of quantum dots, in particular to a preparation method and application of II-III-V-VI alloy quantum dots. Background technique [0002] In the synthesis of Ⅲ-Ⅴ quantum dots such as InP, due to the strong activity of V precursors such as P, it is easy to lead to uneven crystal growth, wider size distribution of Ⅲ-Ⅴ quantum dots and wider fluorescence emission peaks. In addition, due to the non-radiative exciton relaxation process and unsaturated dangling bonds, the quantum efficiency of intrinsic III-V quantum dots is only about 1%. In order to improve the fluorescence quantum yield of Ⅲ-Ⅴ quantum dots, a layer of Ⅱ-Ⅵ element shell with wider band gap can be coated on the Ⅲ-Ⅴ quantum dot core to form Ⅲ-Ⅴ / Ⅱ-Ⅵ core-shell quantum dots , to increase the quantum efficiency of III-V / II-VI core-shell quantum dots to about 40%. However, the III-V / II-VI core-shell quantum dots prepared by this method have disadvanta...

AI Technical Summary

Problems solved by technology

In this preparation method, although II-VI molecular clusters are formed in situ or in advance, it is still necessary to add III precursors and V precursors, and it is still difficult to avoid the independent nucleation of III-V

Therefore, this preparation method is still difficult to form alloy quantum dots with uniform size and composition, and the half-width of the product is more than 50nm, which cannot meet the requirements of narrow half-width in the new display field.

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