Thin film preparation method, tin oxide sno thin film and semiconductor device
A thin film preparation and thin film technology, which is applied in the field of tin oxide SnO thin films and semiconductor devices, can solve the problems of irregular conduction of SnO thin films, and achieve the effect of uniform film thickness
Inactive Publication Date: 2021-11-26
ZHENGZHOU UNIV
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Problems solved by technology
[0004] However, in the related art, when preparing the SnO thin film, there will be a combination of SnO and Sn, or SnO and SnO 2 The formation of such mixed phases leads to the problem of irregular conductivity of the prepared SnO thin film
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[0040] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments.
[0041] An embodiment of the present invention provides a thin film preparation device, which includes: a target stage, a sample stage, a vacuum chamber, a baffle, a substrate heater, an evaporation power source, and a muffle furnace.
[0042] Among them, the substrate heater is used to heat the substrate, the evaporation power supply is used to evaporate the target material, and the muffle furnace is used to anneal the prepared thin film.
[0043] In addition, the target is installed on the target stage, and the substrate is installed on the sample ...
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The invention provides a thin film preparation method, a tin oxide SnO thin film and a semiconductor device, and relates to the technical field of semiconductors. The film preparation method comprises: setting the target material installed on the target platform and the substrate installed on the sample platform in a vacuum chamber; vacuuming the vacuum chamber so that the target material and the substrate are in a vacuum environment; The substrate is heated so that the temperature of the substrate reaches the first preset temperature; the target material is evaporated and the sample stage is rotated so that the target material is pyrolyzed and evaporated, and then a thin film is deposited on the substrate to obtain a tin oxide SnO thin film. By heating the substrate temperature to the first preset temperature and evaporating the target material, the occurrence of SnO and Sn, or SnO and SnO in the preparation of SnO thin films in the related art is avoided 2 The formation of such mixed phases leads to the problem of irregular conduction of the prepared SnO thin film, and a pure phase SnO thin film can be prepared, so that the prepared SnO thin film can conduct regular conduction.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a thin film preparation method, a tin oxide SnO thin film and a semiconductor device. Background technique [0002] TCO (Transparent Conductive Oxide, transparent conductive oxide) thin films have been widely used in the fields of thin film transistors and solar cells. As a candidate material for TCO, stannous oxide (SnO) is becoming more and more important for the preparation of SnO thin films. [0003] In the related art, a pulsed laser deposition technique is used to prepare a tin oxide (SnO) film, and a laser is used to bombard the raw material for preparing the SnO film, and then the bombarded raw material is deposited on the substrate, thereby producing a precipitated SnO film . [0004] However, in the related art, when preparing the SnO thin film, there will be a combination of SnO and Sn, or SnO and SnO 2 The formation of such mixed phases leads to the problem ...
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IPC IPC(8): C23C14/08C23C14/26
CPCC23C14/086C23C14/26
Inventor 陈永生郭海中潘玲
Owner ZHENGZHOU UNIV