Light-emitting diode chip, light-emitting diode and manufacturing method of light-emitting diode
A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as inability to use, and achieve the effect of improving corrosion conditions and reducing the probability of being corroded
Pending Publication Date: 2019-08-23
HC SEMITEK SUZHOU
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[0006] The embodiment of the present invention provides a light-emitting diode chip, a light-emitting diode and a manufacturing method thereof, which can solve the problem that the prior art cannot be used in extreme environments
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[0039] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0040] As the application fields of LEDs become wider and wider, the performance requirements of LEDs are also getting higher and higher. For example, LEDs were originally only used in daily lighting, so LEDs are only required to be suitable for general applications where the temperature is around 25°C, the humidity is around 50%, the P-type electrode of the chip is connected to the positive pole of the power supply, and the N-type electrode of the chip is connected to the negative pole of the power supply. The environment is fine. Now the application range of LED has been greatly expanded, and it may be necessary for the LED to be suitable for a temperature of 50°C to 100°C and a humidity of 50% to 95%. The P-type electrode of the chi...
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The invention discloses a light-emitting diode chip, a light-emitting diode and a manufacturing method of the light-emitting diode, and belongs to the technical field of semiconductors. The light-emitting diode chip comprises a substrate, an undoped semiconductor layer, an N-type semiconductor layer, an active layer, a P-type semiconductor layer, an N-type electrode, a P-type electrode and a water-resisting layer, wherein the undoped semiconductor layer, the N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentially laminated on the substrate; a first edgeregion of the P-type semiconductor layer is provided with a first groove extending to the N-type semiconductor layer; the N-type electrode is arranged on the N-type semiconductor layer in the first groove, the P-type electrode is arranged on a non-edge area of the P-type semiconductor layer, a second edge area of the P-type semiconductor layer is provided with a second groove at least extending to the undoped semiconductor layer, and the water-resisting layer is at least laid on the bottom surface of the second groove. According to the invention, the N-type semiconductor layer under the P-type semiconductor layer can be effectively prevented from being corroded, and the corrosion condition of the light-emitting diode chip is greatly improved.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light emitting diode chip, a light emitting diode and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor diode that can convert electrical energy into light energy. In 1993, Shuji Nakamura, who worked in Nichia Chemical Industry, Japan, invented a blue LED with commercial application value based on wide bandgap semiconductor materials gallium nitride (GaN) and indium gallium nitride (InGaN). This type of LED has been widely used, and most of the white LEDs currently produced are made by covering a layer of light yellow phosphor coating on the blue LED. [0003] Existing LEDs mainly include chips and packaging supports. The chip is the core component of LED, including substrate, undoped gallium nitride layer, N-type gallium nitride layer, active layer formed by altern...
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Patent Timeline
Login to View More IPC IPC(8): H01L33/00H01L33/20H01L33/44H01L33/48H01L33/50H01L33/62H01L33/64
CPCH01L33/20H01L33/44H01L33/007H01L33/48H01L33/50H01L33/62H01L33/64H01L2933/0033H01L2933/0041H01L2933/0066H01L2933/0075
Inventor 尹灵峰吴志浩高艳龙魏柏林王江波
Owner HC SEMITEK SUZHOU