Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Secondary smooth flow control memristor analog circuit

A technology for simulating circuits and memristors, which is applied in the field of secondary smooth flow-controlled memristor simulation circuits, can solve problems such as difficulty in practical implementation, complicated pressure-current conversion of flow-controlled memristor models, and few studies, and achieves a simple structure. Effect

Active Publication Date: 2019-08-27
SHANDONG UNIV OF SCI & TECH
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Fluidic memristors are less researched due to the difficulty of switching their circuit design
The main performance is that the pressure-to-flow conversion of the flow control memristor model is complex, it is difficult to actually realize and accurately simulate the characteristics of the actual flow control memristor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Secondary smooth flow control memristor analog circuit
  • Secondary smooth flow control memristor analog circuit
  • Secondary smooth flow control memristor analog circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] specific implementation plan

[0041] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

[0042] The theoretical starting point of the present invention is the definition expression of the generalized flow control memristor:

[0043]

[0044] figure 1 It is an equivalent analog circuit of a quadratic smooth flow control memristor, including a resistor network, an inverting scaler, an inverting scale adder, an inverting integrator and a multiplier;

[0045] Amplifier U1 is configured to realize the conversion of voltage and current signals, and provide support for the technical realization of subsequent circuit modules;

[0046] The inverting scaler is configured to realize the proportional operation of the output voltage and the input voltage and is inverting: including a first inverting scaler U2 and a second inverting scaler U5;

[0047] an inverse proportional adder configured...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a secondary smooth flow control memristor analog circuit, which utilizes an analog circuit to realize the volt-ampere compact characteristic of a secondary smooth flow controlmemristor, and belongs to the technical field of circuit design. The intrinsic relation of the memristor is realized by using the design of an integrated operation circuit. Specifically, an operational amplifier is used for designing a conversion circuit to realize the equivalent conversion of the current and voltage signals; the proportional operation of an input voltage signal and an output voltage signal is realized by using an inverting proportioner, and the input and the output are in an inverting relationship; the adding operation of a plurality of input voltage signals is realized by using an inverse proportion adder, so that the input voltage signals are summed to serve as the output voltage signals with opposite polarities; an inverting integrator is used for realizing the integral operation on an input voltage signal, and a multiplication circuit is used for realizing the product operation of the two input voltage signals. The designed circuit can replace an actual secondarysmooth flow control memristor analog circuit to realize the circuit design, experiment and application related to the secondary smooth flow control memristor analog circuit, and is of great significance to the electrical characteristic research, such as the series-parallel connection with other electronic components, the practical application research, etc.

Description

technical field [0001] The invention belongs to the technical field of circuit design, in particular to a secondary smooth flow control memristor analog circuit. Background technique [0002] Based on symmetric logical relationships, Chua in 1971 predicted the existence of a fourth fundamental circuit element associated with charge and flux—the memristor, whose name derives from the historical dependence of resistance on the amount of electricity passing through it. In 1976, he further extended the memristor to the memristor system, and gave the compactness effect and frequency effect for judging the characteristic fingerprint of the memristor. These studies are limited to theoretical discussions, and physical memristors have not yet appeared. In 2008, Hewlett-Packard Labs prepared the first non-volatile nanoscale memory device, showing the characteristic fingerprint of memristors, enabling the existence of memristors to be physically verified. Subsequently, a variety of m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G06F17/50
CPCG06F30/367
Inventor 李玉霞常辉宋庆海袁方
Owner SHANDONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com