Defect detection method of metal silicide and formation method of semiconductor structure
A technology of metal silicide and metal silicide layer, which is used in semiconductor/solid-state device manufacturing, semiconductor/solid-state device testing/measurement, electrical components, etc. The effect of batch defective products, reducing the cost and time of inspection
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[0043] The specific implementation manner of the present invention will be described in more detail below with reference to schematic diagrams. The advantages and features of the present invention will be more apparent from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0044] Such as figure 1 As shown, this embodiment provides a method for detecting defects in metal silicides, including:
[0045] S11: providing a substrate and a metal silicide layer covering part of the substrate;
[0046] S21: forming a dielectric layer on the substrate, the dielectric layer covering the substrate and the metal silicide layer and exposing the surface of the metal silicide layer;
[0047] S31: Bombarding the metal silicide layer with an electron beam, and obtaining defect conditions of the met...
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