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Method for eliminating internal stress on surface of semiconductor

A semiconductor and internal stress technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as the influence of processing steps, glue loosening, and inability to perform grinding, and achieve the effect of guaranteeing and eliminating internal stress.

Pending Publication Date: 2019-08-30
SAE TECH DELEVOPMENT DONGGUAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, often in the follow-up process, grinding can no longer be carried out in the bonded state, and the heat treatment itself that can be carried out will also loosen the glue, which will affect the next processing process.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] The method for eliminating internal stress on the semiconductor surface of the present invention will be further described below in conjunction with the examples, but the present invention is not limited thereto. The method is particularly suitable for deformations of semiconductor components after cutting or grinding processes, but is not limited thereby.

[0015] In one embodiment, the method for eliminating internal stress on the semiconductor surface comprises the following steps:

[0016] bonding the first surface of the semiconductor to the mounting plate;

[0017] covering a protective film on a second surface of the semiconductor, the second surface being opposite to the first surface;

[0018] performing ion etching on the back of the fixing plate bonded with the semiconductor, wherein the ion etching includes two ion etching processes with different conditions; and

[0019] The protective film on the second surface is removed.

[0020] The present invention...

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PUM

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Abstract

The invention relates to a method for eliminating the internal stress on the surface of a semiconductor. The method comprises the steps of binding a first surface of the semiconductor to a fixing plate; covering a second surface of the semiconductor with a protective film, wherein the second surface is opposite to the first surface; carrying out ion etching on the back surface of the fixing platebonded with the semiconductor, wherein the ion etching comprises two ion etching processes under different conditions; and removing the protective film on the second surface. According to the invention, deformation and internal stress generated in the cutting and grinding processes of the semiconductor can be eliminated, so that the effect of a subsequent process is ensured.

Description

technical field [0001] The invention relates to the field of semiconductor processing, in particular to a method for eliminating internal stress on a semiconductor surface. Background technique [0002] In the field of semiconductors, with the rapid development of science and technology, the size of semiconductor components is becoming smaller and smaller, so the requirements for the precision of their processing are also getting higher and higher. In the process of processing, semiconductor components undergo cutting, grinding and other processes, which will produce various deformations. This deformation seriously endangers the precision of components. Especially in the process of bonding the glue to the ceramic plate, due to the strength of the glue, the deformation of the semiconductor components is caused, so that the image position of the subsequent exposure and development is shifted, resulting in a change in the shape of the semiconductor components. Typically, the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065
CPCH01L21/3065
Inventor 彭忠华
Owner SAE TECH DELEVOPMENT DONGGUAN