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Preparation method of distributed Bragg reflector of GaAs substrate

A Bragg mirror and substrate technology, applied in laser parts, electrical components, lasers, etc., can solve problems such as warpage of large-sized epitaxial wafers, and achieve the effect of reducing series resistance

Inactive Publication Date: 2019-09-10
度亘核芯光电技术(苏州)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Therefore, the technical problem to be solved by the present invention is to overcome the defects in the prior art that large-scale epitaxial wafers are prone to wafer warpage due to the slightly larger lattice constant of AlGaAs than GaAs, thereby providing a method for preparing a distributed Bragg reflector and Vertical Cavity Surface Emitting Laser

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  • Preparation method of distributed Bragg reflector of GaAs substrate
  • Preparation method of distributed Bragg reflector of GaAs substrate
  • Preparation method of distributed Bragg reflector of GaAs substrate

Examples

Experimental program
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Embodiment 1

[0042] This embodiment provides a method for preparing a vertical cavity surface emitting laser, where a=0.9, b=0.15, and N=40, the details are as follows:

[0043] (1) Determine the thickness of each layer:

[0044] Use ellipsometer to test the refractive index of the material at a wavelength of 850nm, the first refractive index layer Al 0.15 Ga 0.85 The refractive index of As is 3.506, and the second refractive index layer Al 0.9 Ga 0.1 As is 3.040, use the formula d=λ / 4n to get Al 0.15 Ga 0.85 The thickness of As is 60.61nm, Al 0.9 Ga 0.1 The thickness of As is 69.91nm. The first strain compensation layer Al x Ga 1-x As y P 1-y The thickness is 21.2nm, and the linear variation ranges of x and y are: 0.13=y>=0.91.

[0045] (2) Distributed Bragg reflectors grown on GaAs substrates:

[0046] 500nm GaAs buffer layer was epitaxially grown sequentially from the GaAs substrate, and 40 pairs of alternately grown 60.61nm Al 0.15 Ga 0.85 As, 21.2nm Al 0.13 Ga 0.87 As ...

Embodiment 2

[0050] This embodiment provides a method for fabricating a vertical cavity surface emitting laser, where a=0.9, b=0.1, and N=50, specifically as follows:

[0051] (1) Determine the thickness of each layer:

[0052] Use ellipsometer to test the refractive index of the material at a wavelength of 1550nm, the first refractive index layer Al 0.15 Ga 0.85 The refractive index of As is 3.353, and the second refractive index layer Al 0.9 Ga 0.1 As is 2.964, use the formula d=λ / 4n to get Al 0.15 Ga 0.85 The thickness of As is 115.57nm, Al 0.9 Ga 0.1 The thickness of As is 130.74nm. The first strain compensation layer Al x Ga 1-x As y P 1-y The thickness is 39.6nm, and the linear change ranges of x and y are respectively: 0.13=y>=0.91.

[0053] (2) Vertical-cavity surface-emitting lasers grown on GaAs substrates:

[0054] From the GaAs substrate, a 500nm GaAs buffer layer is epitaxially grown sequentially, and 50 pairs of alternately grown 115.57nm Al 0.15 Ga 0.85 As, 39...

Embodiment 3

[0058] This embodiment provides a method for fabricating a vertical cavity surface emitting laser. The only difference from the embodiment is that there is a second strain compensation layer, where a=0.9, b=0.15, N=50, m=0.13, n=0.87, p = 0.95 as follows:

[0059] (1) Determine the thickness of each layer:

[0060] Use ellipsometer to test the refractive index of the material at a wavelength of 850nm, the first refractive index layer Al 0.15 Ga 0.85 The refractive index of As is 3.506, and the second refractive index layer Al 0.9 Ga 0.1 As is 3.040, use the formula d=λ / 4n to get Al 0.15 Ga 0.85 The thickness of As is 60.61nm, Al 0.9 Ga 0.1 The thickness of As is 69.91nm. The first strain compensation layer Al x Ga 1-x As y P 1-y The thickness is 21.2nm, and the linear variation ranges of x and y are: 0.13=y>=0.91.

[0061] (2) Distributed Bragg reflectors grown on GaAs substrates:

[0062] 500nm GaAs buffer layer was epitaxially grown sequentially from the GaAs s...

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Abstract

The invention relates to the technical field of semiconductor lasers, in particular to a preparation method of a distributed Bragg reflector and a vertical cavity surface emitting laser, wherein the method comprises the following steps: providing a GaAs substrate; sequentially and alternatively growing a first refractive index layer, a first strain compensation layer, a second refractive index layer and the first strain compensation layer on the substrate, wherein the strain type of the first strain compensation layer is opposite to the strain type of the first refractive index layer and the second refractive index layer. The stress compensation method is adopted to eliminate stress generated due to lattice mismatch, so that the growth of the strain-free DBR (Distributed Bragg Reflector) is realized, and the problem of wafer warping is avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a method for preparing a distributed Bragg reflector of a GaAs substrate. Background technique [0002] Vertical Cavity Surface Emitting Laser (Vertical Cavity Surface Emitting Laster, referred to as VCSEL) has a high modulation rate, a circular spot that is easy to couple with an optical fiber, has low loss in optical fiber transmission, and has high stability at high temperatures and low Power consumption, easy two-dimensional integration, mature and reliable process, easy integration with other optoelectronic devices, etc. With the increasing demand for data communication with high bandwidth and low power consumption in today's society, the application of VCSEL is becoming more and more extensive. [0003] The resonant cavity of the VSCEL is composed of two distributed Bragg reflectors (DBR for short). DBR is a periodic structure composed of alternately arranged...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183
CPCH01S5/18361
Inventor 赵勇明杨国文张艳春赵卫东
Owner 度亘核芯光电技术(苏州)有限公司