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Semiconductor structure formation method

A semiconductor and conductive structure technology, applied in the field of semiconductor structure formation, can solve problems such as complex process and processing efficiency to be improved, and achieve better results

Inactive Publication Date: 2019-09-20
HUAIAN IMAGING DEVICE MFGR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the existing technology is more complicated in the process of wafer surface treatment, and the processing efficiency needs to be improved

Method used

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  • Semiconductor structure formation method
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  • Semiconductor structure formation method

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Embodiment Construction

[0024] As mentioned in the background technology, the process of processing the wafer surface in the prior art is relatively complicated, and the processing efficiency needs to be improved. The following will combine Figure 1 to Figure 6 Be explained, Figure 1 to Figure 6 It is a structural schematic diagram of each step of a method for forming a semiconductor structure.

[0025] Please refer to figure 1 , a first wafer 100 is provided, and the first wafer 100 includes a first surface and a second surface opposite to each other.

[0026] Please refer to figure 2 , figure 2 yes figure 1 In the enlarged schematic diagram of part A, the first wafer 100 includes a first substrate 101 and a first dielectric layer 102 located on the surface of the first substrate 101, and a first conductive structure 103 is provided in the first dielectric layer 102, so The surface of the first dielectric layer 102 exposes the surface of the first conductive structure 103, and the first sur...

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Abstract

The invention provides a semiconductor structure formation method, which comprises the following steps: providing a first wafer, wherein the first wafer comprises a first substrate and a first dielectric layer arranged on the surface of the first substrate, the first dielectric layer internally having a first conductive structure, the surface of the first dielectric layer exposing the surface of the first conductive structure, the first wafer comprising a first surface and a second surface, which are opposite, and the first surface being the surface of the first dielectric layer and the exposed surface of the first conductive structure; carrying out first surface treatment on the first surface to remove defects on the surface of the first dielectric layer and by-products on the surface of the first conductive structure; providing a second wafer; and after first surface treatment, bonding the first surface of the first wafer to the second wafer. According to the technical scheme, by carrying out first surface treatment on the first wafer, defects on the surface of the first dielectric layer can be removed, and meanwhile, the by-products on the surface of the first conductive structure can be removed, thereby simplifying processing process and improving processing efficiency.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] The image sensor is the core component of the camera equipment, which realizes the image capture function by converting the optical signal into an electrical signal. Taking Complementary Metal Oxide Semiconductor Image Sensors (CMOS Image Sensors, CIS) devices as an example, due to their advantages of low power consumption and high signal-to-noise ratio, they are widely used in various fields. [0003] In recent years, 3D-stack image sensors have shown explosive growth in technical fields such as mobile phones, and Cu-CuBonding is an important technical node of 3D-stack image sensors. Before the two wafers are bonded, the surface of the wafer bonding needs to be treated to enhance the adhesion during bonding. [0004] However, in the prior art, the process of treating the surface o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14687H01L27/1469H01L27/14698
Inventor 王亮李志伟冉春明黄仁德
Owner HUAIAN IMAGING DEVICE MFGR CORP