A kind of α-mns nanosheet and its preparation method and application
A technology of nanosheets and reaction temperature, which is applied in the direction of nanotechnology, nanotechnology, chemical instruments and methods, etc., can solve the problems of low carrier mobility and unstable function of p-type semiconductors, and achieve simple process, low cost, Compositing fast effects
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Embodiment 1
[0039] This embodiment provides a method for preparing α-MnS nanosheets, comprising the following steps:
[0040] (1) S powder and MnCl 2 The powder is respectively placed in the center of the low temperature zone and the high temperature zone of the dual temperature zone tube furnace, and the mica substrate is placed 3 to 6 cm away from the center of the high temperature zone.
[0041] (2) After repeatedly cleaning the quartz tube with argon (Ar), the temperature in the high temperature zone is raised to 665° C., and the temperature in the low temperature zone is raised to 150° C.
[0042] (3) Continuously feed the flow of argon and 10sccm hydrogen to transport the S vapor in the low temperature zone to the high temperature zone, and MnCl 2 The steam reacts and grows on the substrate, and cools down to room temperature naturally after 30 minutes of growth.
[0043] specifically, figure 1 The atomic structure diagram of the α-MnS nanosheet provided for this embodiment; wher...
Embodiment 2
[0048] In this experimental example, the α-MnS nanosheets prepared by the preparation method in Example 1 were used as materials, and the α-MnS photodetector was made by EBL and thermal evaporation process, and its application performance in photoelectric detection was tested. The laser wavelength used is 473nm.
[0049] Figure 5 The structural diagram of the α-MnS photodetector provided for this embodiment, as Figure 5 As shown, this embodiment utilizes HfO with high dielectric constant 2 As the dielectric layer, thermally evaporated Cr / Au (8 / 60nm) as the source / drain, and Cr / Au (5 / 15nm) as the gate.
[0050] Figure 6 Under the different laser intensities provided for the present embodiment, the transfer characteristic curve of α-MnS photodetector is shown by Figure 6 It can be seen that in the dark state, the current of the α-MnS photodetector shows a significant change with the change of the gate voltage, with ~10 6 After adding light, the α-MnS photodetector exhib...
experiment example 1
[0057] In this experiment, the same preparation method as in Example 1 was used to prepare α-MnS nanosheets, and then the reaction temperature was changed to 645°C or 690°C to prepare α-MnS nanosheets; on the basis of the reaction temperature of 645°C, the growth time was changed to 15min or 45min to prepare α-MnS nanosheets.
[0058] Figure 11 The schematic diagram of the change of α-MnS nanosheets with growth temperature and time provided for this experimental example, as shown in Figure 11 As shown, the size of the nanosheets increases first and then decreases as the temperature increases; as the growth time increases from 15min to 45min, the maximum size of the synthesized α-MnS nanosheets gradually increases from 12μm to 125μm.
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Abstract
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