Fast active quenching circuit applied to single photon avalanche diode

A single-photon avalanche and diode technology, applied in the field of photoelectric detection, can solve problems such as unfavorable large-scale pixel unit integration, increased layout area response, complex structure, etc., and achieves fast quenching and reset speed, simple structure, and small layout area. Effect

Active Publication Date: 2019-09-24
XIDIAN UNIV
View PDF5 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Quenching circuits can generally be divided into two forms, one is passive quenching using series large resistance resistors, its structure is simple, but the quenching reset time can be as long as hundreds of nanoseconds; the other is using feedback The active quenching of the structure has a faster quenching reset speed, but the structure is more complex, and the layout area will increase accordingly, which is not conducive to the integration of large-scale pixel units

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Fast active quenching circuit applied to single photon avalanche diode
  • Fast active quenching circuit applied to single photon avalanche diode
  • Fast active quenching circuit applied to single photon avalanche diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The present invention will be described in further detail below in conjunction with specific examples, but the embodiments of the present invention are not limited thereto.

[0024] See figure 1 , figure 1 It is a structural schematic diagram of a fast active quenching circuit applied to a single photon avalanche diode provided by an embodiment of the present invention, including a single photon avalanche diode SPAD and a high-voltage voltage terminal HVDD, and the cathode of the single photon avalanche diode SPAD is connected to the High voltage voltage terminal HVDD connection for generating avalanche current pulse; also includes:

[0025] The quenching reset unit is connected with the single photon avalanche diode SPAD, and is used for quenching and resetting the single photon avalanche diode SPAD, and generates a pulse voltage signal according to the avalanche current pulse;

[0026] The power supply unit VDD is used to provide power for the quenching reset unit. ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention belongs to the technical field of photoelectric detection and particularly relates to a fast active quenching circuit applied to a single photon avalanche diode. The fast active quenching circuit comprises a single photon avalanche diode (SPAD) and a high-voltage terminal (HVDD), wherein the cathode of the SPAD is connected to the HVDD to generate an avalanche current pulse. The fast active quenching circuit further comprises: a quenching reset unit connected to the SPAD for quenching and resetting the SPAD and generating a pulse voltage signal according to the avalanche current pulse; and a power supply unit (VDD) for supplying power to the quenching reset unit. The fast active quenching circuit has the advantages of extremely fast quenching and resetting speed and simple structure.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection, and in particular relates to a fast active quenching circuit applied to a single photon avalanche diode. Background technique [0002] In recent years, Single Photon Avalanche Diode (SPAD) has been used more and more in the field of extremely weak light detection. Generally speaking, when the voltage at both ends of the SPAD is higher than its avalanche breakdown voltage when it is working, it can be said to work in Geiger (Geiger) mode. Compared with traditional extremely weak light detection devices, single photon avalanche diodes working in Geiger mode have the characteristics of high gain, high sensitivity, and high signal-to-noise ratio, and only a single photon can trigger The SPAD produces an avalanche effect and produces an avalanche current, which can obtain a huge photo-generated current gain. The photodetector using the SPAD as a photodetector also has the characterist...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01J11/00H03K17/693
CPCG01J11/00H03K17/693
Inventor 刘马良刘秉政黎雄政胡进朱樟明杨银堂
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap