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Radiation-tolerant metal-oxide semiconductor field effect transistor

A technology of oxide semiconductors and field effect transistors, applied in the field of radiation-resistant metal oxide semiconductor field effect transistors, to achieve the effect of reducing the impact

Inactive Publication Date: 2019-09-24
KOREA ADVANCED INST OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] However, this structure can only minimize the influence caused by the ionizing total dose radiation effect, and in the case of a single event effect, there is a limitation that the generated current pulse (Current pulse) affects the circuit

Method used

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  • Radiation-tolerant metal-oxide semiconductor field effect transistor
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  • Radiation-tolerant metal-oxide semiconductor field effect transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0123] Figure 8 It is a diagram of the layout of a radiation-resistant metal-oxide-semiconductor field-effect transistor resistant to single event effect and total dose effect corresponding to Embodiment 1 of the present invention.

[0124] refer to Figure 8 , In Embodiment 1, three types of dummy drain, deep N well layer and N well layer are applied. In this case, if Figure 16 It is shown in purple (Drain Current (DGA NMOS with DD, NW, and DNW)), and it can be seen that the current pulse based on the single event effect is the smallest.

Embodiment 2

[0126] Figure 9 It is a diagram of the layout of a radiation-resistant metal-oxide-semiconductor field-effect transistor resistant to single event effect and total dose effect corresponding to Embodiment 2 of the present invention.

[0127] and, Figure 10a Shows Figure 9 XX’ section of the layout, Figure 10b Shows Figure 9 The YY' section of the layout.

[0128] refer to Figure 9 , Embodiment 2 is the case of using the N- active layer and the N+ layer, and the N+ / metal-1 through hole part is only applicable to the dummy drain. Compared with Embodiment 1, this layout can be realized with a relatively narrow area, and it can be used when, for example, Embodiment 1 violates a specific design rule of a commercial process or cannot use a deep N-well layer. In the case of Example 2, as in Figure 16 It is shown in cyan (Drain Current (DGA NMOS with Dummy Drain (DD))) in the middle, and it can be seen that the current pulse due to the influence of the single event effect...

Embodiment 3

[0130] Figure 11 It is a diagram of the layout of a radiation-resistant metal-oxide-semiconductor field-effect transistor resistant to single event effect and total dose effect corresponding to Embodiment 3 of the present invention.

[0131] and, Figure 12a Shows Figure 11 XX’ section of the layout, Figure 12b Shows Figure 11 The YY' section of the layout.

[0132] refer to Figure 11 , Embodiment 3 is the case where only the deep N well layer is applied to the dummy drain and the bottom surface.

[0133] More specifically, the N-well (N-well; NW) is not in the form surrounding the radiation-tolerant MOSFET of the embodiment of the present invention, but has a form in which a deep N-well layer is arranged on the bottom surface. formed on the basis of Figure 11 The PN junction between the substrate of the structure shown and Deep N-well (DNW) cannot apply additional voltage to the bottom surface, so the current pulse caused by the single event effect does not flow ...

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Abstract

The present invention relates to a radiation-tolerant metal-oxide semiconductor field effect transistor (MOSFET) to block the leakage current path caused by a total ionizing dose effect and reducing the influence of a current pulse generated due to a single event effect. The radiation-tolerant metal-oxide semiconductor field effect transistor comprises: a poly gate layer used for assigning a gate region and at least one dummy gate area; a source and a drain; a P+ layer and a P- active layer, the P+ region is assigned on the source and the drain; and a dummy drain capable of applying a voltage. According to the invention, the radiation-tolerant metal-oxide semiconductor field effect transistor can provide the electronic part which can normally work in the radiation environment where particle radiation and electromagnetic radiation.

Description

technical field [0001] The present invention relates to radiation tolerant metal oxide semiconductor field effect transistors (MOSFETs), and more particularly, to metal oxide semiconductor field effect transistors having radiation tolerant properties resistant to single event effects and total dose effects. Background technique [0002] Radiation refers to the energy flow emitted by members constituting atoms or molecules when they are unstable at high energy levels, appearing in the form of radiation such as X-rays, γ-rays, α-rays, β-rays, neutrons, and protons. They are divided into particle form or electromagnetic wave, the particle form is called particle radiation, and the electromagnetic wave form is called electromagnetic wave radiation. Even if the radiation is different, the intensity of the radiation or the influence on the object can be evaluated from the essence of the energy flow according to the amount of energy transmitted or absorbed. [0003] Radiation that...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L23/552H01L29/08
CPCH01L29/78H01L23/552H01L29/0847H01L29/0692H01L29/1083H01L21/761H01L27/0207H01L29/42356H01L29/4238H01L29/49H01L21/823493H01L23/556H01L29/1095H01L29/7832
Inventor 李熙哲盧永卓
Owner KOREA ADVANCED INST OF SCI & TECH