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A metalloporphyrin-based heterojunction memristor and its preparation method and application

A technology of metalloporphyrin and heterojunction, which is applied in the direction of electrical components, etc., to achieve the effect of simple preparation process, stable performance and many performance indicators

Active Publication Date: 2022-08-02
NANJING UNIV OF POSTS & TELECOMM
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

So far, most of this kind of work has focused on the use of memristors to replace the resistors in the circuit to achieve signal filtering and the simulation research of using memristors to build filter circuits. There are reports

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  • A metalloporphyrin-based heterojunction memristor and its preparation method and application
  • A metalloporphyrin-based heterojunction memristor and its preparation method and application
  • A metalloporphyrin-based heterojunction memristor and its preparation method and application

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Embodiment Construction

[0030] The present invention will be further explained below in conjunction with the accompanying drawings.

[0031] References to specific examples of the disclosed porphyrin memristors and specific examples of their preparation methods are now described in detail. In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention will be further described in detail below with reference to specific embodiments and accompanying drawings. The drawings and descriptions provided herein are for purposes of illustration only of embodiments of the present invention. The shapes and dimensions in the respective drawings are for schematic illustration only, and do not strictly reflect actual shapes and dimensions. In addition, the embodiments shown in the present invention should not be construed as being limited to the specific shapes of the regions shown in the figures. In the illustrations of the embodiments o...

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Abstract

The invention discloses a metal porphyrin-based heterojunction memristor and a preparation method and application thereof. The memristor comprises a bottom electrode, a heterojunction layer, a metal oxide layer and a top electrode sequentially arranged from bottom to top ; The heterojunction layer includes two metal porphyrin layers for regulating the electrical properties of the memristor, and the metal oxide layer is used for providing ions and vacancies required for the operation of the memristor. The metal porphyrin heterojunction memristor provided by the invention has a simple preparation process, stable performance, is suitable for flexible devices, can be processed in a large area, has variable and adjustable performance indicators, and has voltage-dependent filtering characteristics; The stability and performance are very high.

Description

technical field [0001] The invention belongs to the fields of information storage and artificial intelligence, in particular to the synaptic function simulation of organic memristors and neuromorphic devices, and is expected to be applied to logic circuits, resistive storage, neuromorphic computing, artificial intelligence and other fields. Background technique [0002] The origin of the memristor can be traced back to 1962 when T.W.Hickmott studied the resistance-switching phenomenon of metal-insulator-metal (MIM) sandwich structure under bias voltage, and then the academic community invested great enthusiasm in this field. In 1971, Professor Cai Shaotang of the University of California, Berkeley, based on the symmetry theory, proposed that there is another basic element besides resistance, capacitance and inductance. He named it memristor, which represented the relationship between magnetic flux and electric charge. relationship between. Until 2008 HP Labs used Pt / TiO 2 ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/841H10N70/881H10N70/883H10N70/011
Inventor 解令海鞠若麟仪明东马可陈叶黄维
Owner NANJING UNIV OF POSTS & TELECOMM
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