A room temperature ferromagnetic two-dimensional material doped with transition group elements and preparation method thereof

Abstract

The invention discloses a room temperature ferromagnetic two-dimensional material doped with transition group elements and a preparation method, and the method can realize two-dimensional V doped uniformly doped with Fe elements. 0.8 Fe 0.2 Se 2 Preparation of nanosheets. The preparation method includes two steps: the first step is to prepare V by chemical vapor transport method. 0.8 Fe 0.2 Se 2 The bulk single crystal, the second step uses the liquid phase exfoliation method to separate the bulk V 0.8 Fe 0.2 Se 2 Single crystal thinning into 2D V 0.8 Fe 0.2 Se 2 Nanosheets. Undoped VSe 2 The bulk material has no magnetism, and the doped 2D V 0.8 Fe 0.2 Se 2 The nanosheets have room temperature ferromagnetism. The specific steps include: 1) Weighing the element element in the molar ratio and sealing it at one end of the quartz tube; 2) Growing the bulk V by chemical vapor transport 0.8 Fe 0.2 Se 2 single crystal; 3) The bulk V was separated by the liquid phase exfoliation method with formamide solvent. 0.8 Fe 0.2 Se 2 Single crystal thinning into 2D V 0.8 Fe 0.2 Se 2 Nanosheets. 4) Collect the exfoliated 2D V in solution by centrifugation 0.8 Fe 0.2 Se 2 Nanosheets. The two-dimensional V prepared by the present invention 0.8 Fe 0.2 Se 2 The nanosheets are uniformly doped and have room temperature ferromagnetism, which has broad application prospects in the field of high-performance spintronic devices.

Description

technical field [0001] The invention belongs to the technical field of preparation of nano-magnetic materials, in particular to a room temperature ferromagnetic two-dimensional material doped with transition elements and a preparation method. Background technique [0002] Two-dimensional transition metal chalcogenides are layered film materials with ultrathin structures composed of several layers of atoms. Two-dimensional transition metal chalcogenides have rich physicochemical properties, such as a wide range of electronic band gaps, including semi-metallic molybdenum disulfide, tungsten disulfide, semi-metallic tungsten disulfide, and metallic vanadium disulfide. and vanadium diselenide, etc. In addition, two-dimensional transition metal chalcogenides with intrinsic ferromagnetism have attracted extensive attention. This is mainly due to the application of ultrathin 2D magnetic materials, which is expected to greatly increase the integration density of spintronic devices...

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