Special low-delay intelligent wall switch
A low-latency, switching technology, applied in signal transmission systems, instruments, and adjusting electrical variables, etc., can solve the problems of difficult wireless control and high switching delay, and achieve the effect of improving anti-interference performance, relatively small delay, and avoiding mutual interference
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Example Embodiment
[0044] Example one
[0045] This embodiment combines Figure 1-Figure 2 The technical scheme of the present invention is described in detail:
[0046] A low-latency smart wall special switch, including:
[0047] The first current generating circuit 110: outputs a first voltage;
[0048] The second current generating circuit 120: outputting a second voltage asynchronous with the first voltage;
[0049] Transconductance copy circuit 300: receiving asynchronous first voltage and second voltage and generating periodic transconductance voltage;
[0050] Wireless signal transceiver 600: receives wireless control signals sent by remote devices;
[0051] Wireless control signal generator 500: receiving the transconductance voltage output by the transconductance copy circuit 300 and the wireless control signal output by the wireless signal transceiver 600, and outputting the control voltage under the control of the wireless control signal;
[0052] Relay switch 400: receives the control voltage ou...
Example Embodiment
[0073] Example two
[0074] In the first embodiment, the sixth field effect transistor Q4 and the eighth field effect transistor Q8 are integrated field effect transistors. In this embodiment, the first current generating circuit 110 and the second current generating circuit 120 are described in specific circuits:
[0075] First current generating circuit 110 reference image 3 , The following specifically describes the first current generating circuit 110:
[0076] The third field effect transistor Q1 is a P tube, the source of the third field effect transistor Q1 is connected to the first power supply V1, the drain of the third field effect transistor Q1 and the drain of the eleventh field effect transistor Q12 and the twelfth field effect transistor Q12 The drain of the field effect transistor Q13 is connected, the gate of the eleventh field effect transistor Q12 is connected to the second switch A2, the gate of the twelfth field effect transistor Q13 is connected to the first swi...
Example Embodiment
[0102] Example three
[0103] On the basis of the second embodiment, a voltage follower circuit 200 is further provided. The voltage follower circuit 200 receives the transconductance voltage and isolates the output standard voltage;
[0104] The voltage follower circuit 200 includes a third operational amplifier U3, the non-inverting input terminal of the third operational amplifier U3 and the transconductance replica circuit 300 are connected to the first potential point a, and the inverting input terminal of the third operational amplifier U3 and the third operational amplifier U3 The output terminal of the third operational amplifier U3 outputs the standard voltage;
[0105] The function of the voltage follower circuit 200 is like an isolator, so that the voltage generating circuit of the present invention and the external circuit will not interfere with each other and influence each other;
[0106] The circuit principle and working conditions of the embodiments are described in d...
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