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Manufacturing method of semiconductor device

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of high energy, mass production and wide use, high cost of high-energy ion implantation equipment, etc., to save manufacturing Cost, the effect of improving yield rate

Active Publication Date: 2019-10-18
ICLEAGUE TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The cost of high-energy ion implantation equipment is relatively expensive, and ion implantation at deeper positions requires higher energy, which has a negative impact on the mass production and widespread use of vertically structured semiconductor devices.

Method used

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  • Manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device

Examples

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Embodiment Construction

[0017] IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) is composed of BJT (Bipolar Junction Transistor, bipolar transistor) and MOS (Metal Oxide Semiconductor, metal-oxide-semiconductor / insulated gate field effect transistor) The composite fully controlled voltage-driven power semiconductor device is a switch that is either on or off. The IGBT does not have the function of amplifying the voltage. It can be regarded as a wire when it is turned on, and it is regarded as an open circuit when it is turned off.

[0018] figure 1 It is a structural schematic diagram of an IGBT device in an embodiment, such as figure 1 As shown, the IGBT device is a vertical device, and the thickness can reach 6mil (mil). The bottom layer of the IGBT device is the J3 layer, the substrate made of semiconductor material is formed by P-type heavy doping, and the J3 layer is connected with the collector C made of metal material. The J2 layer above the J3 layer is formed by ...

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Abstract

The embodiment of the invention discloses a manufacturing method of a semiconductor device. The method comprises the following steps: carrying out first ion injection on a semiconductor substrate fromthe first surface of the semiconductor substrate, wherein the depth of first ion injection is smaller than the thickness of the semiconductor device; bonding a bearing piece on the first surface, wherein the bearing piece is used for fixing the semiconductor substrate; carrying out second ion injection on the semiconductor substrate on the second surface of the semiconductor substrate, wherein the direction of second ion injection is different from that of first ion injection, and the direction of the second surface is opposite to the direction of the first surface.

Description

technical field [0001] The embodiment of the present application relates to semiconductor technology, and relates to but not limited to a method for manufacturing a semiconductor device. Background technique [0002] Vertically formed semiconductor devices usually require multi-layer processes to be stacked or formed by fractional ion implantation, such as IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) devices, which require multiple N-type or P-type ions respectively. After implantation, a PNPN structure is formed, and finally the entire vertical device is formed. When performing ion implantation at a deeper position, it is usually necessary to implant high-concentration ion materials into the semiconductor substrate after being processed by high-energy ion implantation equipment, so as to achieve semiconductor doping. The cost of high-energy ion implantation equipment is relatively expensive, and ion implantation at deeper positions requires h...

Claims

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Application Information

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IPC IPC(8): H01L21/265H01L21/683
CPCH01L21/2652H01L21/6835H01L2221/68313
Inventor 谭经纶
Owner ICLEAGUE TECH CO LTD
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