The saturation method of the graphite frame and the graphite frame

A graphite frame and secondary drying technology, which is applied in the field of solar cells, can solve the problems of affecting the passivation effect of silicon wafers and prone to red edges, so as to improve the passivation effect, prolong the cleaning cycle, and increase the production capacity of equipment.

Active Publication Date: 2022-02-18
JA SOLAR
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AI Technical Summary

Problems solved by technology

[0002] At present, after the saturation treatment of the graphite frame, the passivated silicon wafer obtained by placing the silicon wafer in the graphite frame and passivating the silicon wafer is prone to red edges, which affects the passivation effect of the silicon wafer.

Method used

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  • The saturation method of the graphite frame and the graphite frame
  • The saturation method of the graphite frame and the graphite frame
  • The saturation method of the graphite frame and the graphite frame

Examples

Experimental program
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Embodiment 1

[0050] (1) Take the old graphite frame 10, and use 5% to 15% hydrofluoric acid to clean the graphite frame 10 for 8 hours to remove the silicon nitride passivation layer deposited on the surface of the graphite frame 10;

[0051] (2) Use pure water to rinse the graphite frame 10 after removing the passivation layer for 0.5 hours;

[0052] (3) Use pure water to soak the graphite frame 10 for 4 hours;

[0053] (4) Use an oven to dry the graphite frame 10 for the first time at a temperature of 150°C to 200°C for 6 hours;

[0054] (5) Carry out a second drying treatment on the graphite frame 10 in the plate plasma enhanced chemical vapor deposition equipment, the temperature of the drying treatment is 400-450° C., and the drying treatment time is 1 hour;

[0055] (6) After drying the graphite frame 10 for the second time in the plasma-enhanced chemical vapor deposition equipment, feed ammonia and silane, turn on the radio frequency power supply, and deposit a silicon nitride pass...

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Abstract

The present invention relates to a graphite frame saturation method and a graphite frame, wherein the graphite frame saturation method comprises the following steps: step S1, removing impurities on the surface of the graphite frame (10) and washing with water; step S2, performing a water wash on the graphite frame The first drying treatment, the temperature of the drying treatment is 150-200°C; step S3, performing the second drying treatment on the graphite frame, the temperature of the drying treatment is 400-450°C; step S4, setting a passivation film layer on the surface of the graphite frame. The graphite frame prepared by the saturation method of the graphite frame in the embodiment of the present invention is used to passivate silicon wafers, which greatly reduces the number of silicon wafers with abnormal appearance and improves the passivation effect of silicon wafers, and the saturated method shortens the saturation time of the graphite frame.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a graphite frame saturation method and the graphite frame. Background technique [0002] At present, after the saturation treatment of the graphite frame, the passivation of the silicon wafer obtained by placing the silicon wafer in the graphite frame tends to have red edges around the periphery of the passivated silicon wafer, which affects the passivation effect of the silicon wafer. Contents of the invention [0003] In order to solve the above-mentioned technical problems, an object of the present invention is to provide a method for saturating a graphite frame. The graphite frame prepared by the saturation method is used to passivate silicon wafers, which greatly reduces the risk of silicon wafers with abnormal appearance. Quantity, the passivation effect of the silicon wafer is improved, and the saturation method shortens the saturation time of the graphite frame. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/673H01L31/18
CPCH01L21/673H01L31/1804Y02P70/50
Inventor 赵环王玉肖王贵梅
Owner JA SOLAR
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