Apparatus for treating object to be treated

A technology of the object to be processed and the processing device, applied in the direction of plasma, semiconductor/solid-state device manufacturing, discharge tube, etc., can solve the problems of reducing the optimal range, the influence of the introduction amount or pressure, and the loss of the optimal range.

Active Publication Date: 2019-11-01
ULVAC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, in the etching process, the above-mentioned spatial height difference becomes a cause of inhomogeneity of the plasma treatment within the surface (upper surface) of the object to be processed.
This is because the above-mentioned space height difference affects the process conditions such as the introduction amount and pressure of the gas for plasma processing, and becomes the main cause of narrowing or losing the optimum range.

Method used

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  • Apparatus for treating object to be treated
  • Apparatus for treating object to be treated
  • Apparatus for treating object to be treated

Examples

Experimental program
Comparison scheme
Effect test

experiment example 1

[0132] Figure 20 It is a list which shows the evaluation result of Experimental Example 1 (case which does not have a pad part). Figure 20 (a) shows a distribution graph showing the etching rate. Figure 20 (b) shows a graph showing the normalized etching rate. Figure 20 (c) shows the insertion position of the pad part. Figure 20 D shows the effect. Figure 20 The four angles (0°, 45°, 90°, 315°) in (b) are Figure 20 The direction in which the etching rate is measured in the substrate (object to be processed) shown in (a).

[0133] In the case of Experimental Example 1, by Figure 20 It is clear from (b) that the normalized etch rates are very different in the four angles. That is, it can be seen that in Experimental Example 1, the angular dependence of the etching rate of the object to be processed is strong, and the distribution of the etching rate in the plane of the substrate (object to be processed) is not uniform.

experiment example 2

[0135] Figure 21 It is a list which shows the evaluation result of Experimental Example 2 (case where the pad part was arrange|positioned on the whole circumference). Figure 21 (a) shows a distribution graph showing the etching rate. Figure 21 (b) shows a graph showing the normalized etching rate. Figure 21 (c) shows the insertion position of the pad part. Figure 21 (d) shows the effect. Figure 21 The four angles (0°, 45°, 90°, 315°) in (b) are Figure 21 The direction in which the etching rate is measured in the substrate (object to be processed) shown in (a).

[0136] In the case of Experimental Example 2, by Figure 21 It is clear from (b) that the normalized etch rates are very different in the four angles. That is, it can be seen that the angular dependence of the etching rate of the object to be processed is strong, and the distribution of the etching rate in the plane of the substrate (object to be processed) is not uniform. In Experimental Example 2, it wa...

experiment example 3

[0138] Figure 22 It is a list showing the evaluation results of Experimental Example 3 (the case where the pad portion is arranged on the right semicircular portion). Figure 22 (a) shows a distribution graph showing the etching rate. Figure 22 (b) shows a graph showing the normalized etching rate. Figure 22 (c) shows the insertion position of the pad part. Figure 22 (d) shows the effect.

[0139] In the case of Experimental Example 3, by Figure 22 (b) clearly shows that the normalized etch rate differs in the four angles. That is, in Experimental Example 3, it can be seen that although the angular dependence of the etching rate of the object to be processed is weaker than that of Experimental Examples 1 and 2, the distribution of the etching rate in the substrate surface is still uneven. It was confirmed that, as in Experimental Example 3, the pad portion was placed on the Figure 22 Also in the case of the semicircular portion on the right side in (c), as in Exper...

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Abstract

An apparatus for treating an object to be treated according to the present invention comprises: a chamber having an internal space, the pressure of which can be reduced, the chamber being configured such that a plasma treatment is performed on an object to be treated in the internal space; a first electrode which is disposed in the chamber and on which the object to be treated is mounted; a firstpower source which applies negative potential bias voltage to the first electrode; a gas-introducing device which introduces process gas into the chamber; and an exhausting device which reduces the pressure in the chamber. A cover portion is provided between the first electrode and the object to be treated so as to cover the first electrode. A spacer portion is disposed between the first electrodeand the cover portion so as to occupy a local region.

Description

technical field [0001] The present invention relates to a processing device capable of uniformly etching a substrate or a thin film formed on the substrate (hereinafter referred to as "processed object"). More specifically, it relates to a method for forming a film on a semiconductor substrate made of silicon, quartz, glass, etc. by a sputtering method or a CVD method, when etching a substrate including the formed film, or when A processing device for objects to be processed that is used to etch natural oxide films or unwanted objects that have formed on the surface of a substrate. [0002] This application claims priority based on Patent Application No. 2017-201074 filed in Japan on October 17, 2017, and the content thereof is incorporated herein. Background technique [0003] In the etching process, ions generated in the plasma are accelerated by self-negative bias to collide with the object to be processed. In this etching process, as the size of the substrate to be pro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065H05H1/46
CPCH01L21/3065H05H1/46H01J37/32568H01J37/3244H01J37/32816H01L21/67069H01J2237/3343
Inventor 加贺美刚福本英范
Owner ULVAC INC
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