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A kind of oxide thin film substrate, oxide thin film and preparation method thereof

A technology of oxide film and oxide layer, applied in metal material coating process, vacuum evaporation plating, coating and other directions, can solve the problems of lack of single crystal substrate, high price, difficult to obtain oxide film, etc. Excellent physical properties, limited number of solutions, expensive effects

Active Publication Date: 2021-10-26
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Aiming at the deficiencies in the prior art, the present invention provides an oxide thin film substrate to solve the problem that the continuous adjustable phase transition of the oxide thin film cannot be realized on a single substrate in the prior art, and it is difficult to obtain an oxide thin film with a specific crystal structure. And technical problems such as the lack of single crystal substrates and high prices limit the full application of strain engineering in oxide films

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  • A kind of oxide thin film substrate, oxide thin film and preparation method thereof
  • A kind of oxide thin film substrate, oxide thin film and preparation method thereof
  • A kind of oxide thin film substrate, oxide thin film and preparation method thereof

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Embodiment 1

[0025] In this embodiment, the present invention provides an oxide thin film substrate, which includes a substrate substrate and an interface layer epitaxially formed on the substrate substrate, and the thickness of the interface layer is 0-30 nm; In this embodiment, the interface layer material is Ca 0.96 Ce 0.04 MnO 3 (CCMO), the lattice parameter is The substrate base material is NdScO 3 .

Embodiment 2

[0027] In this embodiment, the present invention provides an oxide thin film, which includes the oxide thin film substrate of the present invention and an oxide layer disposed on the oxide thin film substrate, and the oxide layer is simultaneously supported during a phase change. Strain in the bottom and interface layers. In this embodiment, the interface layer material in the oxide film substrate is Ca 0.96 Ce 0.04 MnO 3 (CCMO), the lattice parameter is Substrate base material is NdScO 3 (NSO), the oxide layer material is the room temperature multiferroic material BiFeO 3 (BFO).

[0028] Since the interface layer material CCMO and the oxide film material BFO ​​have a suitable degree of lattice mismatch, BFO can be subjected to strain from the NSO substrate and BFO while undergoing a phase transition. When the thickness of CCMO is thin, the strain applied by the substrate to CCMO is not completely released, and the compressive strain of CCMO on BFO is not enough to main...

Embodiment 3

[0030] In this embodiment, the present invention provides a method for preparing an oxide thin film. Please refer to figure 1 , figure 1 It is a schematic diagram of the structure of the oxide film (BFO / CCMO / NSO) obtained in the embodiment; in this embodiment, the preparation method of the oxide film includes the following steps:

[0031] a. Preparation of the interface layer: Epitaxially form an interface layer 20 with a specific thickness on the substrate 10, the thickness of which can be determined according to the actual situation to obtain an oxide film with a specific crystal structure; in this embodiment, the substrate The base substrate 10 is NdScO 3 (NSO), the interface layer 20 material is Ca 0.96 Ce 0.04 MnO 3 (CCMO, ); the interface layer 20 is prepared by using a pulsed laser deposition system (PLD), and the light source used is a KrF laser generator. The growth and preparation conditions of the CCMO interface layer 20 are as follows: the energy inside the ...

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Abstract

The invention discloses an oxide thin film substrate, an oxide thin film and a preparation method thereof. An interface layer is introduced between the substrate base material and the oxide thin film, and the interface layer material and the lattice mismatch degree of the oxide are obtained. When the phase transition of the oxide occurs, it is also strained by the substrate and the interface layer; by controlling the thickness of the interface layer, and then controlling the degree of stress release, an oxide film with a specific crystal structure can be obtained; by The setting of the interface layer breaks through the limitation of a single substrate to provide fixed stress, fills the gap in the strain area, and realizes multi-morphic phase boundaries; it solves the limitation that some substrates are expensive and limited in quantity on the market, and has certain economic value .

Description

technical field [0001] The invention relates to the field of thin film strain engineering, in particular to an oxide thin film substrate, an oxide thin film and a preparation method thereof. Background technique [0002] Strain engineering is a powerful way to drive the structural phase transition of perovskite oxide films and enhance their physical properties such as magnetic properties, ferroelectricity, piezoelectricity, and dielectric properties. BiFeO, a rare room temperature multiferroic material among perovskite oxides 3 (BFO) ground state is rhombohedral phase (R), and the lattice parameter is about Theory and experiments have proved that BFO also has various crystal structures such as square phase (T), orthorhombic phase (O) and monoclinic phase (MC). By selecting a single crystal substrate with a different degree of mismatch with BFO and introducing strain engineering, the transformation of different phase structures can be obtained: strong compressive strain dr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/08C23C14/02C23C14/28
CPCC23C14/024C23C14/08C23C14/28
Inventor 陈德杨尹小哲邓雄陈超孙菲
Owner SOUTH CHINA NORMAL UNIVERSITY