Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Chamber and semiconductor processing equipment

A chamber and process component technology, applied in metal material coating process, vacuum evaporation plating, coating and other directions, can solve the problems of short cleaning cycle of process components, reduced machine utilization rate, increased particle size, etc. Table utilization, avoid particle increase, avoid the effect of excessive temperature fluctuation

Active Publication Date: 2022-04-22
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD +1
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The temperature fluctuation of the process components will cause the adhered substances on the process components to fall due to thermal expansion and contraction, which will increase the particles falling on the wafer, which will lead to a shorter cleaning cycle of the process components and a lower machine utilization rate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chamber and semiconductor processing equipment
  • Chamber and semiconductor processing equipment
  • Chamber and semiconductor processing equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] In order for those skilled in the art to better understand the technical solutions of the present invention, the chamber and semiconductor processing equipment provided by the present invention will be described in detail below in conjunction with the accompanying drawings.

[0029] Please also refer to figure 1 and figure 2 , the chamber 1 provided by the embodiment of the present invention is provided with a process component 2 and a heating device 6 for baking the process component 2 when the chamber is idle. Wherein, a base 8 is provided in the chamber 1 . The process assembly 2 includes a liner 21, a shield ring 22 and a deposition ring 23, wherein the liner 21 includes an upper liner and a lower liner, the upper liner is used to protect the side wall of the chamber 1; the lower liner is used to avoid particles Dropped to the bottom of chamber 1. The shielding ring 22 is used to prevent particles from falling to the bottom of the chamber 1 from the gap between ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
Login to View More

Abstract

The invention provides a chamber and semiconductor processing equipment, in which a process component and a heating device for baking the process component are arranged in the chamber, and a temperature monitoring device is also included for monitoring the temperature of the process component; according to The temperature of the process components is adjusted to adjust the output power of the heating device to maintain the temperature of the process components at the target temperature. The chamber provided by the invention can avoid the increase of particles caused by the large temperature fluctuation of the process components, thereby prolonging the cleaning cycle of the process components and improving the utilization rate of the machine.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a chamber and semiconductor processing equipment. Background technique [0002] Physical vapor deposition or sputtering deposition technology is a very important process in the manufacturing process of integrated circuits. It is mainly used in the production of wires in chips, the generation of barrier layers, and the formation of metal hard masks. In the physical vapor deposition process of the metal hard mask, the wafer needs to undergo two steps in sequence: 1) degassing process; 2) TiN barrier layer process. [0003] The TiN barrier process is mainly to deposit a layer of TiN film on the wafer. The process is generally carried out in a relatively closed space in a high-vacuum chamber, and the parts constituting this closed space include targets, bases and process components. Moreover, when the chamber is idle, the process components in the chamber need to be baked...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/22C23C14/54C23C14/56
CPCC23C14/22C23C14/54C23C14/564
Inventor 刘建强耿宏伟李强白志民张兴
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com