Semiconductor anode material for hydrogen peroxide preparation by photoelectrocatalysis and preparation method thereof

A photoelectric catalysis and anode material technology, applied in the direction of electrodes, electrolysis process, electrolysis components, etc., to achieve the effect of simple and easy preparation method, mild reaction conditions and short reaction time

Active Publication Date: 2019-11-19
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it has not been possible to increase the target product H from the perspective of cocatalysts so far. 2 o 2 yield, increasing its selectivity

Method used

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  • Semiconductor anode material for hydrogen peroxide preparation by photoelectrocatalysis and preparation method thereof
  • Semiconductor anode material for hydrogen peroxide preparation by photoelectrocatalysis and preparation method thereof
  • Semiconductor anode material for hydrogen peroxide preparation by photoelectrocatalysis and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] (1) TiO 2 Preparation of nanorod precursor solution

[0043] a) Add 20mL deionized water and 20mL concentrated hydrochloric acid (aqueous hydrogen chloride solution, the mass percentage of hydrogen chloride is 37%) into a beaker, and stir for 5min to prepare TiO 2 Nanorod precursor a solution;

[0044] b) on TiO 2 Add 0.65mL tetra-n-butyl titanate to the nanorod precursor a solution, and continue stirring for 5 minutes to obtain TiO 2 Nanorod precursor b solution.

[0045] c) on TiO 2 In the nanorod precursor b solution, add 3.35mL NaCl aqueous solution with a concentration of 5mol / L, and continue stirring for 5 minutes to obtain TiO 2 Nanorod precursor solution.

[0046] (2)TiO 2 Hydrothermal Growth of Nanorods

[0047] Add TiO to the hydrothermal kettle 2 Nanorod precursor solution and 5*1cm 2 The FTO conductive glass was hydrothermally grown at 150 °C for 10 h. The obtained sample was washed and fired at 500° C. for 2 hours (air atmosphere). Finally get T...

Embodiment 2

[0060] (1) TiO 2 Preparation of nanorod precursor solution

[0061] a) Add 20mL deionized water and 20mL concentrated hydrochloric acid into a beaker and stir for 5min to prepare TiO 2 Nanorod precursor a solution;

[0062] b) on TiO 2 Add 0.3mL tetra-n-butyl titanate to the nanorod precursor a solution, and continue stirring for 5 minutes to obtain TiO 2 Nanorod precursor b solution.

[0063] c) on TiO 2 In the nanorod precursor b solution, add 3.35mL NaCl solution with a concentration of 5mol / L, and continue stirring for 5 minutes to obtain TiO 2 Nanorod precursor solution.

[0064] (2)TiO 2 The hydrothermal growth of nanorods is the same as in Example 1.

[0065] (3)Co 3 o 4 The preparation of nanoparticles is the same as in Example 1.

[0066] (4)Co 3 o 4 / TiO 2 The preparation of the composite photoanode material is the same as in Example 1.

[0067] TiO 2 The nanorod grows on the conductive surface of the FTO conductive glass, and its shape is in the shap...

Embodiment 3

[0073] (1) TiO 2 Preparation of nanorod precursor solution

[0074] a) Add 20mL deionized water and 20mL concentrated hydrochloric acid into a beaker and stir for 5min to prepare TiO 2 Nanorod precursor a solution;

[0075] b) on TiO 2 Add 1.0mL tetra-n-butyl titanate to the nanorod precursor a solution, and continue stirring for 5 minutes to obtain TiO 2 Nanorod precursor b solution.

[0076] c) on TiO 2 In the nanorod precursor b solution, add 3.35mL NaCl solution with a concentration of 5mol / L, and continue stirring for 5 minutes to obtain TiO 2 Nanorod precursor solution.

[0077] (2)TiO 2 The hydrothermal growth of nanorods is the same as in Example 1.

[0078] (3)Co 3 o 4 The preparation of nanoparticles is the same as in Example 1.

[0079] (4)Co 3 o 4 / TiO 2 The preparation of the composite photoanode material is the same as in Example 1.

[0080] TiO 2 The nanorod grows on the conductive surface of the FTO conductive glass, and its shape is in the shap...

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Abstract

preparation method a semiconductor anode material for hydrogen peroxide preparation by photoelectrocatalysis and a preparation method thereof. A TiO2 nanorod is grown on FTO conductive glass, and Co3O4 nanoparticles are loaded on the basis of the TiO2 nanorod to finally obtain the Co3O4/TiO2 composite photoelectric anode material. When the anode material is prepared, the preparation includes threesteps of preparing a TiO2 nanorod precursor solution, preparing the TiO2 nanorod grown on the FTO conductive glass by a hydrothermal method and obtaining the Co3O4/TiO2 composite photoelectric anodematerial by a drop coating method. The invention provides the novel preparation method of the Co3O4/TiO2 composite photoelectric anode material for hydrogen peroxide preparation by photoelectrocatalysis, and the selectivity and activity that the material is oxidized from water into hydrogen peroxide can be effectively improved through co-catalysis of the Co3O4 nanoparticles.

Description

technical field [0001] The invention relates to the field of semiconductor electrodes used in photoelectrochemical cells, in particular to a method for preparing a semiconductor anode material for photocatalytically preparing hydrogen peroxide. Background technique [0002] The direct conversion of solar energy into storable chemical energy has become a key technology to ensure a stable supply of energy (T.A. . Fukuzumi, K.B. Yoon, F.A. Armstrong, M.R. Wasielewski and S. Styring, Energy Environ. Sci., 2013, 6, 695-698). Hydrogen peroxide (H 2 o 2 ) is a liquid at normal temperature and pressure, so its energy density per unit volume is high without using a high-pressure water tank. In addition, in addition to being a green and clean multi-purpose oxidant, purifier and bleach in the process of organic conversion, when used as H 2 o 2 When fuel cell, H 2 o 2 It can be used as negative electrode oxidant and anode reducing agent at the same time, providing a theoretical o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25B1/30C25B11/06
CPCC25B1/30C25B1/55C25B11/051C25B11/057C25B11/091Y02E60/36
Inventor 巩金龙张冀杰王拓常晓侠李盎
Owner TIANJIN UNIV
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