Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

A bidirectional thyristor electrostatic protection device

An electrostatic protection and device technology, which is applied in the field of bidirectional thyristor electrostatic protection devices, can solve the problem that unidirectional thyristor devices cannot meet bidirectional electrostatic protection, etc., and achieves improved electrostatic discharge capability, improved protection level, and uniform temperature distribution. Effect

Active Publication Date: 2020-05-01
XIANGTAN UNIV
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] For the protection design of bidirectional signal level circuits, unidirectional thyristor devices cannot meet the needs of bidirectional electrostatic protection, so bidirectional thyristor devices become the primary choice

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A bidirectional thyristor electrostatic protection device
  • A bidirectional thyristor electrostatic protection device
  • A bidirectional thyristor electrostatic protection device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0030] Such as Figure 4 , Figure 5 As shown, a bidirectional thyristor electrostatic protection device includes a P-type substrate 101;

[0031] An N-type buried layer 201, a first P+ implantation region 601 and a sixth P+ implantation region 608 are sequentially provided in the substrate 101 from left to right;

[0032] A first N-type deep well 501, a first P-well 401, an N-well 301, a second P-well 402, and a second N-type deep well 502 are sequentially arranged above the N-type buried layer 201 from left to right;

[0033] A second P+ implantation region 602, a third P+ implantation region 603, and a first N+ implantation region 604 are sequentially provided in the first P well 401 from left to right;

[0034] A second N+ implantation region 605, a fourth P+ implantation region 606, and a fifth P+ implantation region 607 are sequentially provide...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a bidirectional thyristor electrostatic protection device, which comprises a substrate, wherein an N-type buried layer is arranged in the substrate; a first N-type deep trap, afirst P trap, an N trap, a second P trap and a second N-type deep trap are arranged above the N-type buried layer; a second P+ injection region, a third P+ injection region and a first N+ injection region are arranged in the first P trap; a second N+ injection region, a fourth P+ injection region and a fifth P+ injection region are arranged in the second P trap; the second P+ injection region, the N trap and the first P trap form a first PNP tube; the third P+ injection region, the N trap and the first P trap form a second PNP tube; the second N+ injection region, the fourth P+ injection region and the N trap form a first NPN tube; and the second N+ injection region, the fifth P+ injection region and the N trap form a second NPN tube. An additional pair of PNP tube and NPN tube is added,so that the current discharge path is increased, and the current distribution is more uniform.

Description

technical field [0001] The invention relates to the field of electrostatic protection, in particular to a bidirectional thyristor electrostatic protection device. Background technique [0002] Static electricity is a normal phenomenon in nature, and it is also ubiquitous in IC manufacturing, handling and use. Electrostatic failure is an important problem that IC designers need to face in IC design. The feature size of semiconductor devices is decreasing year by year following Moore's Law, and IC designers can squeeze more transistors into a limited chip area. Smaller manufacturing process and greater component density will bring more difficult electrostatic protection design difficulties. [0003] Diodes, triodes and field effect transistors are commonly used electrostatic protection devices. Compared with other electrostatic protection devices, one-way thyristors have higher discharge capacity per unit area. Therefore, the emergence of one-way thyristor devices provides t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02
CPCH01L27/0262
Inventor 周子杰金湘亮汪洋
Owner XIANGTAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com