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Transient voltage suppressor

A transient voltage suppression and electrical connection technology, applied in the field of microelectronics, can solve the problems that TVS cannot be used in high-power applications, TVS transient power limitations, etc., to improve electrostatic discharge capabilities, avoid manufacturing costs, and avoid complex structures Effect

Active Publication Date: 2018-09-18
BEIJING YANDONG MICROELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The limitation of the operating voltage also leads to the limitation of the transient power of the TVS, so that the TVS cannot be used in high-power applications

Method used

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Embodiment Construction

[0027] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown.

[0028] It should be understood that when describing a certain structure, when a layer or an area is referred to as being "on" or "over" another layer or another area, it may mean directly on another layer or another area, or Other layers or regions are also included between it and another layer or another region. And, if the structure is turned over, the layer, one region, would be "under" or "beneath" the other layer, another region. If it is to describe the situation directly on another layer or another area, the expression "A is directly above B" or "A is above and adjacent to B" will be used herein.

[0029] In the following descrip...

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Abstract

The invention discloses a transient voltage suppressor which includes: a semiconductor substrate; a first doped region in the semiconductor substrate; an epitaxial layer on the semiconductor substrate; a conductive channel extending from a surface of the epitaxial layer to the semiconductor substrate; a second doped region in the epitaxial layer; and a third doped region in the second doped region. The transient voltage suppressor includes a punch through diode. The first doped region, the second doped region together, and the third doped region serve separately as a collecting region, a base region and the emitter region of the punch through diode. The conductive channel is in contact with the semiconductor substrate and is in contact with at least one of the first doped region and the epitaxial layer. The second doped region is arranged above the first doped region and is separated from the conductive channel. The transient voltage suppressor adopts the punch through diode in reducing working voltage, so that the electrostatic discharge capability is increased under large power.

Description

technical field [0001] The present invention relates to the technical field of microelectronics, and more particularly, to a transient voltage suppressor. Background technique [0002] Transient Voltage Suppressor TVS (Transient Voltage Suppressor) is a high-efficiency circuit protection device developed on the basis of voltage regulator tubes. The shape of TVS diodes is the same as that of ordinary Zener tubes. However, due to the special structure and process design, the transient response speed and surge absorption capacity of TVS diodes are much higher than ordinary Zener tubes. For example, TVS diodes have a response time of only 10 -12 seconds, and can absorb surge power up to several thousand watts. Under reverse application conditions, when subjected to a high-energy large pulse, the working impedance of the TVS diode will quickly drop to an extremely low conduction value, allowing a large current to pass, and at the same time, clamp the voltage at a predetermined ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/535H01L27/02H01L27/08
Inventor 周源唐晓琦巨长胜
Owner BEIJING YANDONG MICROELECTRONICS
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