Preparation method of curved surface nanostructure
A nanostructure and curved surface technology, which is applied in the field of nanofabrication, can solve the problems of difficult to process curved nanostructures, difficult to obtain nanometer-sized structures, and complicated processes.
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[0026] see figure 1 , the preparation method of the curved surface nanostructure of an embodiment, comprises the steps:
[0027] Step S110: according to the curved nanostructure to be prepared, use L-Edit software to draw a layout.
[0028] The drawing of the layout needs to consider the width, because the width of the layout is large, that is, the width of the resist layer after exposure and development is large, and it takes a long time for the resist to be completely etched away. Therefore, under the same etching conditions, after the resist layer with a small width is completely consumed, if it continues to be etched, the pattern will be moved downward as a whole, and the resulting nanostructure will have a smaller depth. Using this principle, patterns with different widths can be designed to form three-dimensional curved nanostructures with different depths.
[0029] In this embodiment, the layout width is at least 50 nm. The minimum thickness of the resist layer is 50...
Embodiment 1
[0070] The preparation process of the curved surface nanostructure of this embodiment is as follows:
[0071] (1) According to the nanostructure to be prepared, use L-Edit software to draw the layout, such as Figure 4 shown.
[0072] (2) Use NH first 4 OH, H 2 o 2 and SC1 cleaning solution with a water volume ratio of 1:1:5 to clean the substrate for 10 min, and then use HCl, H 2 o 2 and water volume ratio of 1:1:5 SC2 cleaning solution to clean the substrate for 10 minutes. Then put the substrate into BOE and soak for 10s, wash the substrate with water, and dry it, and finally bake the substrate at 180°C for 10min.
[0073] (3) An electron beam resist PMMA was spin-coated on one side of the cleaned substrate to form a resist layer with a thickness of 300 nm.
[0074] (4) Place the substrate in nanobeam NB5 electron beam exposure equipment to expose the resist layer with an exposure dose of 8C / m 2 , the electron beam current is 1nA, and the accelerating voltage is 80k...
Embodiment 2
[0077] The preparation process of the curved surface nanostructure of this embodiment is as follows:
[0078] (1) According to the nanostructure to be prepared, use L-Edit software to draw the layout.
[0079] (2) Use NH first 4 OH, H 2 o 2 and SC1 cleaning solution with a water volume ratio of 1:1:5 to clean the substrate for 10 min, and then use HCl, H 2 o 2 and water volume ratio of 1:1:5 SC2 cleaning solution to clean the substrate for 10 minutes. Then put the substrate into BOE and soak for 10s, wash the substrate with water, and dry it, and finally bake the substrate at 180°C for 10min.
[0080] (3) An electron beam resist PMMA was spin-coated on one side of the cleaned substrate to form a resist layer with a thickness of 200 nm.
[0081] (4) Place the substrate in nanobeam NB5 electron beam exposure equipment to expose the resist layer with an exposure dose of 8C / m 2 , the electron beam current is 1nA, and the accelerating voltage is 80kV. Then the resist layer ...
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