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A kind of solar cell preparation method with p-doped mo electrode

A solar cell and electrode technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of high price, limit the improvement of device efficiency, reduce device efficiency, etc., achieve simple process, improve work function, and reduce manufacturing cost Effect

Active Publication Date: 2021-09-24
NANKAI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The work function of Mo does not match that of photovoltaic materials such as copper-zinc-tin-sulfur-selenide (CZTSSe), which limits the improvement of device efficiency.
Other electrodes with high work function, such as Au, are expensive, which is not conducive to the commercial application of thin film solar cells.
During the high-temperature selenization preparation of CZTSSe solar cells, sulfur or selenium will form molybdenum disulfide (selenium) with Mo (MoS(e) 2 ), deteriorating the series resistance of the device, thereby reducing the device efficiency

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  • A kind of solar cell preparation method with p-doped mo electrode
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  • A kind of solar cell preparation method with p-doped mo electrode

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Embodiment Construction

[0017] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. It should be understood that the specific The examples are only used to explain the present invention, not to limit the present invention. The described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0018] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "upper", "lower", "vertical" and "horizontal" are based on the orientation or positional relation...

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Abstract

The invention discloses a method for preparing a solar cell with a P-doped Mo electrode, which comprises the following steps: preparing a Mo metal electrode on a substrate; performing the Mo metal electrode in a phosphate solution with a concentration level of mmol / L soaking, and then annealing at 550°C for 30 minutes to obtain a P-doped Mo electrode; forming a metal prefabricated layer on the P-doped Mo electrode; performing post-selenization or post-sulfurization treatment on the metal prefabricated layer to form an absorption layer ; forming a buffer layer on the absorber layer; forming an intrinsic zinc oxide layer and a doped zinc oxide layer on the buffer layer; and forming a top electrode.

Description

technical field [0001] The invention relates to a solar cell preparation technology, in particular to a method for preparing a solar cell with a P-doped Mo electrode. Background technique [0002] Solar energy is one of the green and clean energy sources and plays an important role in solving the fossil energy crisis. Improving the efficiency of solar cell devices and reducing manufacturing costs are the main research directions for large-scale commercial application of solar cells. Compound thin-film solar cells have the advantages of high theoretical efficiency, high light absorption rate, and low material consumption, and are one of the most promising solar cells. Currently commercially used solar cells are CIGS and CdTe, etc., usually using metal Mo as the positive electrode of the device. Mo is chemically stable with a work function of 4.6eV. The back electrode with high work function is beneficial to the transport of holes in solar cells. Improving the work functio...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/18
CPCH01L31/022425H01L31/022441Y02E10/50Y02P70/50
Inventor 张毅吴建宇王东潇武墨青武莉刘玮敖建平孙云
Owner NANKAI UNIV