Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Crystal pulling growth device

A growth device and crystal technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of thermal distribution asymmetry, crystal quality influence, strict equipment requirements, etc., to reduce the probability of seed crystal fracture, improve Good crystal growth quality and thermal distribution symmetry

Inactive Publication Date: 2019-12-27
FUZHOU PHOTOP QPTICS CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Since the KTN crystal is a perovskite crystal continuous solid solution system, it is impossible to use the traditional pulling method for crystal growth
In the prior art, the relatively advanced KTN crystal growth process successfully grows high-quality KTN crystals at lower temperatures (below 1200°C) by using the molten salt method and the molten salt extraction method; however, these two The disadvantages of the method are also obvious, for example, the growth cycle is too long, up to about 30 days, there are also problems such as large solvent volatilization, corrosion of quartz and refractory materials, and it is difficult to repeatedly grow large-sized KTN crystals, and the requirements for equipment are harsh. These problems have virtually increased the growth cost of KTN crystals, limiting the development and application of KTN crystals
[0004] In order to ensure the growth of KTN crystals with relatively constant components, some manufacturers have added automatic feeding devices to continuously add materials to the platinum crucible, or used the principle of growing small crystals in a large pot to grow KTN crystals by pulling, thereby simplifying the production process. The production process shortens the crystal growth cycle, but it still has the problem of asymmetrical heat distribution, which affects the quality of the grown crystal, which in turn affects the development and application of the crystal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Crystal pulling growth device
  • Crystal pulling growth device
  • Crystal pulling growth device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Such as figure 1 As shown, the crystal pulling growth device of the present invention is applied to contain polycrystalline melts to grow rectangular crystals 2 by pulling method, and it includes a main body 1 made of platinum material, and the main body 1 is provided with a multi- The stirring chamber 11 of the crystal melt, the cross section of the stirring chamber 11 is circular, and one side of the stirring chamber 11 is connected with a growth chamber 12 with a rectangular cross section, and the polycrystalline melt in the stirring chamber 11 is controlled by an external The platinum stirring rod 31 is rotated and stirred to drive the polycrystalline melt in the growth chamber 12 to form a rectangular circulation for growing the rectangular crystal 2 by the pulling method.

[0033] The crystal pulling growth device of the present invention is applied to a polycrystalline melt to carry out a method for growing a KTN crystal by a pulling method comprising the followi...

Embodiment 2

[0040] Such as figure 2 As shown, on the basis of the structure of the crystal pulling growth device described in Example 1, when an automatic feeding device 33 is provided in the muffle furnace, it is also possible to prepare KTN polycrystalline feedstock for feeding;

[0041] The preparation method of KTN polycrystalline supplementary material is as follows: according to the molar ratio of 1.02:0.37:0.63, weigh the raw material K 2 CO 3 , Nb 2 o 5 and Ta 2 o 5 Grind in a mortar and mix well, then use 10 8 Pa is pressurized to make block raw materials, and then put the block raw materials in a traditional platinum crucible, put them into the heating chamber of the muffle furnace, and slowly raise the temperature to 1100 °C at a heating rate of 5-60 °C / h, and keep the temperature for 48 hours. Get KTN polycrystalline feed;

[0042] The present invention adopts the above technical scheme, during the crystal growth period, the KTN polycrystalline feed material is quantit...

Embodiment 3

[0044] Such as image 3 As shown, on the basis of the structure of the crystal pulling and growing device described in Embodiment 2, a feeding chamber 13 for feeding polycrystalline melt is connected to the other side of the stirring chamber 11 .

[0045] Preferably, the cross section of the feeding chamber 13 is rectangular or circular.

[0046] The present invention adopts the above technical scheme, which can overcome the requirement of fast melting speed of feeding materials directly into the stirring chamber 11, and reduces the technical difficulty of feeding materials. When the muffle furnace is provided with an automatic feeding device 33, it is also possible to prepare the KTN polycrystalline feed material according to the preparation method described in embodiment 2, and during crystal growth, the KTN polycrystalline feed material is fed from the KTN polycrystalline feed device 33 by the automatic feeding device 33. The upper part is quantitatively fed into the feedi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a crystal pulling growth device. The device is used for containing polycrystalline melt so as to grow rectangular crystals through a pulling method. The device comprises a main body made of a platinum material, wherein a stirring cavity for stirring a polycrystalline melt is formed in the main body; the cross section of the stirring cavity is round in shape, wherein one side of the stirring cavity is communicated with a growth cavity with a rectangular cross section, and the polycrystalline melt in the stirring cavity is rotationally stirred by an external platinum stirring rod so as to drive the polycrystalline melt in the growth cavity to form rectangular circulation for growing rectangular crystals by a pulling growth method. The invention has the advantages ofreasonable design, good heat distribution symmetry and good crystal growth quality, and is beneficial to the growth of large-size crystals.

Description

technical field [0001] The invention relates to the technical field of crystal growth equipment, in particular to a crystal pulling growth device. Background technique [0002] Potassium tantalum niobate (KTa 1-x Nb x o 3 , referred to as KTN) crystal is potassium niobate (KNbO 3 , referred to as KN) and potassium tantalate (KTaO 3 , referred to as KT), is the crystal with the largest secondary electro-optic effect discovered so far, and it is also one of the earliest crystals with photorefractive properties; like KT and KN crystals, KTN The crystals have a perovskite structure. At room temperature, KTN crystals can exist in both paraelectric phase (cubic phase m3m) and ferroelectric phase (tetragonal phase 4mm or orthorhombic phase mm2) depending on the composition. In the KTN ferroelectric phase, the linear electro-optic effect can be used to realize holographic storage, and in the paraelectric phase, the secondary electro-optic effect can also be used to achieve thi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B15/30C30B29/30
CPCC30B15/305C30B29/30
Inventor 吴砺陈燕平卢秀爱陈卫民林磊
Owner FUZHOU PHOTOP QPTICS CO LTD
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com