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Polarized light detector based on two-dimensional layered semiconductor material and its preparation method

A two-dimensional layered, polarized light technology, used in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as single detection spectral range, achieve high photoelectric responsivity and polarization, and excellent polarized light The effect of detection performance

Active Publication Date: 2021-06-08
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI +1
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  • Application Information

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Problems solved by technology

However, the detection spectral range of these materials is relatively single, such as limited to the visible light or near-infrared region

Method used

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  • Polarized light detector based on two-dimensional layered semiconductor material and its preparation method
  • Polarized light detector based on two-dimensional layered semiconductor material and its preparation method
  • Polarized light detector based on two-dimensional layered semiconductor material and its preparation method

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preparation example Construction

[0037] The present invention also discloses a preparation method of the polarized light detector as described above, comprising the following steps:

[0038] preparing an active layer on the substrate;

[0039] Prepare the drain electrode and the source electrode respectively on both sides of the active layer on the substrate and wire them;

[0040] The polarized light detector is obtained after packaging the above formed device.

[0041] Wherein, the step of preparing the active layer on the substrate specifically includes: using polydimethylsiloxane to transfer a two-dimensional layered semiconductor material on the substrate as the active layer;

[0042] Wherein, the step of preparing the drain electrode and the source electrode specifically includes:

[0043] spin-coating a mask material on the prepared active layer substrate;

[0044] Etching electrode regions of the source electrode and the drain electrode on the mask material;

[0045] depositing gold on the electro...

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Abstract

A polarized light detector based on a two-dimensional layered semiconductor material, its preparation method and application, the polarized light detector includes a substrate and a source electrode, a drain electrode and an active layer all arranged on the substrate; the active layer placed between the source and drain electrodes. The present invention uses a two-dimensional layered semiconductor material as the active layer, and the source electrode and the drain electrode are both metal materials. A suitable metal material, gold, is selected to make the interface between the semiconductor and the metal an ohmic contact, and to retain the photoelectric properties of the material itself. The lead-tin disulfide used in the present invention has high photoelectric responsivity and polarization, and the light absorption area covers the ultraviolet to near-infrared band, and is widely used in polarized light detection.

Description

technical field [0001] The invention relates to the technical field of photodetector preparation, in particular to a polarized photodetector based on a two-dimensional layered semiconductor material and a preparation method thereof. Background technique [0002] Two-dimensional material photodetectors have attracted extensive attention in the past decade. Transition metal chalcogenides are an important class of two-dimensional materials, and their excellent photoelectric properties make them have great potential in the field of photodetectors. With the rapid development of science and technology, the requirements for photodetectors are getting higher and higher. Broadening the detection spectrum range of photodetectors is an important direction. At the same time, polarized light detection can provide higher detection accuracy. In the future There are broad application prospects in the field of photoelectric detection. [0003] The principle of the photodetector is that the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/113H01L31/032H01L31/0224H01L31/18
CPCH01L31/022408H01L31/0324H01L31/1136H01L31/1896Y02P70/50
Inventor 黄皖魏钟鸣文宏玉李京波
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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