Unlock instant, AI-driven research and patent intelligence for your innovation.

Silicon-on-insulator with crystalline silicon oxide

A silicon-on-insulator, crystalline silicon technology, applied in crystal growth, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., can solve problems such as adverse effects on the quality of silicon layers

Pending Publication Date: 2019-12-27
TURUN YLIOPISTO
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

One disadvantage is that ion bombardment adversely affects the quality of the remaining silicon layer above the silicon oxide

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon-on-insulator with crystalline silicon oxide
  • Silicon-on-insulator with crystalline silicon oxide
  • Silicon-on-insulator with crystalline silicon oxide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] The detailed description provided below in conjunction with the drawings is intended as a description of some embodiments, and is not intended to represent the only form in which the embodiments can be constructed, implemented, or utilized.

[0017] At least some of the embodiments and examples discussed below can provide, for example, a simple, substantially single-step method for forming high-quality SOI structures using crystalline silicon oxide as the material of the insulating layer. In addition, at least some of the embodiments and examples discussed below may provide, for example, a high-quality SOI layer structure suitable for introduction as part of various semiconductor devices. For example, the SOI layer structure can be used as a deposition surface for depositing a semiconductor device layer thereon.

[0018] figure 1 The method 100 can be used to form SiO including crystalline silicon oxide x The semiconductor structure of the silicon-on-insulator (SOI) layer st...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

A method (100) for forming a semiconductor structure (200) comprising a silicon-on- insulator layer structure with crystalline silicon oxide SiOx as the insulator material comprises: providing (120) acrystalline silicon substrate (201) having a substantially clean deposition surface (202) in a vacuum chamber; heating (130) the silicon substrate to an oxidation temperature To in the range of 550 to 1200, 550 to 1000, or 550 to 850 DEG C; supplying (140), while keeping the silicon substrate in the oxidation temperature, with an oxidation pressure Po in the range of 1.10-8 to 1.10-4 mbar in thevacuum chamber, molecular oxygen O2 into the vacuum chamber with an oxygen dose Do in the range of 0.1 to 1000 Langmuir; whereby a crystalline silicon oxide layer (204) with a thickness of at least two molecular layers is formed within the silicon substrate, between a crystalline silicon base layer (203) and a crystalline silicon top layer (205).

Description

Background technique [0001] Silicon-on-insulator (SOI) structures can be used as substrates and building blocks for various types of semiconductor devices, such as MOSFETs and other types of transistors, and other types of microelectronic components and circuits, and silicon photonic components. [0002] The quality of the SOI structure is very important to the performance of the device formed on the substrate. In many applications, crystalline, high-quality SOI structures will bring the best device performance. [0003] Traditionally, the SOI layer structure has been manufactured by ion implantation, which involves bombarding the existing silicon surface with oxygen ions and then annealing. This results in the formation of an amorphous silicon oxide layer in the silicon substrate. One disadvantage is that ion bombardment adversely affects the quality of the remaining silicon layer above the silicon oxide. [0004] A method is disclosed in US 20060003500A1, in which an atomic layer...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/02H01L21/762
CPCH01L21/02238H01L21/02255H01L21/7624C30B31/06H01L21/02H01L21/02164H01L21/223H01L21/2252H01L21/02172H01L21/02271H01L21/0228H01L23/3171
Inventor 佩卡·洛卡宁米哈伊尔·库兹敏雅科·美凯莱马尔朱卡·图奥米宁马尔科·蓬基宁安蒂·拉赫蒂卡莱维·科科朱哈-佩卡·莱赫蒂奥
Owner TURUN YLIOPISTO