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Wafer thinning process and wafer thinning device

A wafer and process technology, applied in the field of wafer thinning processes and devices, can solve the problems of residual mechanical stress, environmental pollution, and high cost

Pending Publication Date: 2019-12-31
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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  • Claims
  • Application Information

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Problems solved by technology

[0008] In order to overcome the deficiencies of the prior art, the present invention provides a wafer thinning process and device, which solves the problems of high technical difficulty in processing high-hardness wafers, generation of residual mechanical stress, environmental pollution and low cost in the prior art. high problem

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  • Wafer thinning process and wafer thinning device

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Embodiment Construction

[0030] This section will describe the specific embodiments of the present invention in detail. The preferred embodiments of the present invention are shown in the drawings. The function of the drawings is to supplement the description of the text part of the manual with graphics, so that the present invention can be understood intuitively and vividly. Each of the technical features and overall technical solutions of, but they cannot be understood as a limitation of the protection scope of the present invention.

[0031] In the description of the present invention, if an orientation description is involved, such as "up", "down", "front", "rear", "left", "right", etc., the orientation or positional relationship indicated is based on the drawings. The orientation or positional relationship is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orien...

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Abstract

The invention relates to the technical field of wafer thickness reduction and discloses a wafer thinning process and a wafer thinning device. The wafer thinning process is based on an electric spark process. The wafer thinning device comprises a power supply which at least comprises a first electrode and a second electrode. The first electrode is electrically connected to a to-be-processed wafer,the second electrode is connected to a processing tool, a gap exists between the processing tool and the wafer, and the power supply can generate a voltage capable of breaking a medium in the gap downbetween the wafer and the processing tool. By applying an electric spark processing principle and taking the wafer as an electrode material, a material is removed by means of energy generated by discharge, so that the process is not limited by hardness of the material, and the problem that super-hard materials such as a third generation semiconductor are difficultly processed by conventional mechanical grinding is solved. The process which is non-contact processing is free of contact acting force and does not generate residual stress. Environmental pollutants are not generated in the whole process course, and the cost is moderate.

Description

Technical field [0001] The invention relates to the technical field of wafer thickness reduction, in particular to a wafer thinning process and device. Background technique [0002] Semiconductor wafer preparation is to slice the ingot into a wafer that meets the requirements of the manufacturing of the integrated circuit. The wafer is subjected to various cleaning, film formation, photolithography, etching, and doping. Miscellaneous processes complete the integrated circuit on its surface. As current electronic products continue to develop in the direction of small, light, and thin on the one hand, and on the other hand, they continue to develop in the direction of system integration, complete functions, and integration, which promotes the continuous innovation of packaging technology. The three-dimensional packaging technology in which multiple chips are stacked and assembled together has become the main development trend in the future due to its advantages of small space occu...

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Application Information

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IPC IPC(8): B23H1/00B23H11/00H01L21/02
CPCB23H1/00B23H11/00H01L21/02
Inventor 赵永华关均铭
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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