Magnetron control method, magnetron control device and magnetron sputtering equipment

Abstract

The invention discloses a magnetron control method, device and magnetron sputtering equipment. Including: obtaining the film thickness of the film layer deposited in different deposition areas on the wafer under the state of constant rotation of the magnetron; wherein, the particles sputtered by the target are sputtered onto the wafer within a specific incident angle range; according to the obtained Divide the motion area of ​​the magnetron into several sub-motion areas, each sub-motion area corresponds to a deposition area; compare the film thickness of the deposition area corresponding to each sub-motion area, and the corresponding film thickness is relatively large The dwell time of the magnetron is reduced in the sub-movement area of ​​the sub-movement area; the dwell time of the magnetron is increased corresponding to the sub-movement area with a relatively small film thickness, so that the film thickness of the deposition area corresponding to each sub-movement area is uniform. The film thickness of the deposition area corresponding to each sub-movement area can be quickly made consistent, and the thickness uniformity of the film layer can be improved, thereby improving the processing and manufacturing yield of the wafer, and reducing the manufacturing cost.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a magnetron control method, a magnetron control device and a magnetron sputtering device. Background technique [0002] Magnetron sputtering in physical vapor deposition (Physical Vapor Deposition, PVD) is one of the most widely used techniques in the back-end process of integrated circuit chip preparation. Metal interconnection, hard mask, and packaging all require the use of PVD technology. Among them, metal interconnection is the most critical technology. Metal wires are deposited by PVD in the grooves and through holes formed by photolithography technology, and the transistors are connected to each other to form the required circuit. A complete metal interconnection process usually consists of: barrier layer / seed layer (Barrier / Seed Layer) deposition, copper electroplating (ECP, Electrochemical Plating), chemical mechanical polishing (CMP, Chemical Mechan...

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Problems solved by technology

[0003] Generally, a magnetron sputtering device includes a reaction chamber, a target, a magnetron, and a drive mechanism that drives the magnetron to move. However, when the magnetron moves, there will be a partial overlapping area, which will lead to overlapping The film thickness of the film layer deposited on the wafer surface in the area increases, making the film thickness uneven

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