Raman method and device for measuring transient temperature change and distribution caused by electric heating

Abstract

The invention discloses a Raman method and device for measuring transient temperature change and distribution caused by electric heating. The method comprises the following steps that: 1, a to-be-measured device is periodically electrified and heated, so that the periodic transient temperature change of the to-be-measured device can be incurred, and a measurement position of the to-be-measured device is selected, pulse detection laser of which the period is the same as the period of heating electric signals are adopted, time delay between the pulse detection laser and the heating electric signals is changed, so that the transient temperature change of the to-be-measured position can be obtained; and with the time delay is fixed, different measurement positions are selected, so that the temperature distribution of the different positions of the to-be-measured device can be obtained. With the method adopted, the period synchronization of the electric heating signals and the detection light signals can be realized, so that the high-temporal-spatial-resolution transient temperature change and temperature distribution measurement of the to-be-measured electric heating device are realized by controlling the time delay and light spot positions.

Description

technical field [0001] The invention relates to the technical field of optical temperature measurement, in particular to a Raman method and device for measuring the transient temperature change and distribution caused by electrical heating. Background technique [0002] With the development of miniaturization and high integration of electronic products, the power consumption of electronic products has gradually increased, and the heat flux density has increased significantly. The problem of heat dissipation has become a key problem that restricts the development of nanoscale electronic devices. Taking a chip as an example, the heat flux density of a local hot spot can be as high as 10 8 W / m 2 , local high temperature and high heat flux density will cause increased leakage, accelerated diffusion of dopants, and significantly shorten the life of the chip. Only by accurately measuring the position and temperature of the hot spot when the chip is working, and then performing t...

AI Technical Summary

Problems solved by technology

However, since the size of transistors and channels in the chip has reached the submicron or even nanometer level, the spatial resolution of traditional measurement methods can no longer meet the measurement requirements of the internal temperature distribution of the chip.

In addition, due to the periodic change of the current applied to some chips during operation, their temperature will also undergo periodic changes, and the change period can reach the order of microseconds or even nanoseconds. The time resolution of existing measurement methods is also difficult to meet the requirements of temperature changes. measurement requirements

[0003] Taking the traditional contact method as an example, due to the small size and small heat capacity of nanoscale electronic devices, thermocouples or thermal resistors can only be arranged in limited positions on the device, which will cause changes in the temperature distribution of the device and cannot obtain working time. Real temperature distribution; thermocouple or thermal resistance has a large heat capacity, which cannot achieve ultra-fast temperature measurement

Therefore, traditional contact methods cannot meet the requirements of temporal and spatial resolution for temperature measurement of nanoscale electronic devices under working conditions.

The commonly used non-contact methods, taking femtosecond laser thermal reflection method and infrared thermal imaging method as examples: femtosecond laser thermal reflection method has ultra-high time resolution, but this method measures the temperature change of the material through reflectivity, which is difficult Obtain the temperature distribution in space; although the infrared thermal imaging method can measure the spatial distribution of temperature, its spatial resolution is limited by the wavelength of light, and it is not suitable for the measurement of temperature distribution at the submicron or even nanometer level. Slow, difficult to measure transient temperature changes of the device under test

[0004] To sum up, the existing temperature measurement methods are still unable to realize the measurement of transient temperature change and temperature distribution with high temporal and spatial resolution for energized nanoelectronic devices, which has become an urgent problem to be solved in the field of temperature measurement.

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