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Manufacturing method of flash memory device

A manufacturing method and flash memory device technology, which is applied in the field of flash memory device manufacturing, can solve problems such as lateral deformation of control gates, and achieve the effects of reducing deformation and improving yield

Active Publication Date: 2022-03-18
SHANGHAI HUALI INTEGRATED CIRCUIT CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The application provides a method for manufacturing a flash memory device, which can solve the problem that the method for manufacturing a flash memory device provided in the related art easily causes lateral deformation of the control gate

Method used

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  • Manufacturing method of flash memory device
  • Manufacturing method of flash memory device
  • Manufacturing method of flash memory device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] refer to figure 1 , which shows a flowchart of a method for manufacturing a flash memory device provided by an exemplary embodiment of the present application, the method includes:

[0045] Step 101 , providing a substrate, the substrate includes an active area, a gate is formed on the active area, and the gate includes a control gate.

[0046] Step 102, nitriding the gate and the substrate to change the side surface activity of the control gate.

[0047] Step 103 , filling the surface of the gate and the substrate with an organic medium layer, so that the organic medium layer is filled between the control gates.

[0048] To sum up, in this embodiment, after the gate is formed on the substrate during the manufacturing process of the flash memory device, the substrate and the gate are subjected to nitriding treatment, and the gap between the control gates is filled with an organic medium. layer, since the activity of the side surface of the control gate is changed afte...

Embodiment 2

[0052] Reference Example 1, Figure 4 and Figure 5 , the difference between embodiment 2 and embodiment 1 is: the height of the organic dielectric layer 202 is higher than the height of the gate 220.

Embodiment 3

[0054] With reference to Embodiment 1 and Embodiment 2, the difference between Embodiment 3 and the foregoing embodiments is that in step 102, the nitriding treatment temperature is 600 degrees Celsius to 1000 degrees Celsius. Optionally, in this embodiment, the time for nitriding treatment is 30 seconds to 1 minute; optionally, in this embodiment, when performing nitriding treatment on the gate 220 and the substrate 210, the nitrogen gas (N 2 ) flow rate greater than 60 standard milliliters per minute (standard cubic centimeter per minute, sccm).

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Abstract

The present application discloses a method for manufacturing a flash memory device, including: providing a substrate, the substrate includes an active region, a gate is formed on the active region, and the gate includes a control gate; Nitriding treatment to change the side surface activity of the control gate; filling an organic medium layer between the control gates. In the present application, after the gate is formed on the substrate in the manufacturing process of the flash memory device, the substrate and the gate are subjected to nitriding treatment, and the gap between the control gates is filled with an organic medium layer. Since the control gate is nitrided After the treatment, the activity of the side surface is changed, so the deformation of the control gate caused by the residual air bubbles caused by filling the organic medium layer can be reduced to a certain extent, and the yield rate of the flash memory device is improved.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to a method for manufacturing a flash memory device. Background technique [0002] Flash memory (Nand-flash, hereinafter referred to as "flash memory") is a memory that uses non-volatile memory (Non-volatile Memory, NVM) technology, and is currently widely used in smartphones, tablet computers, digital cameras, general-purpose Universal Serial Bus Flash Disk (Universal Serial Bus Flash Disk, USB flash disk, referred to as "U disk") and other electronic products with storage functions. The main features of flash memory are: relatively large capacity, fast rewriting speed, suitable for storing large amounts of data, and can still save data after power failure, so it has been more and more widely used. [0003] The gate of the flash memory device includes a control grid (Control Grid, CG). Generally, in the manufacturing process of the flash memory de...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11524H01L27/1157H10B41/35H10B43/35
CPCH10B41/35H10B43/35
Inventor 刘涛巨晓华黄冠群邵华
Owner SHANGHAI HUALI INTEGRATED CIRCUIT CORP