Competitive spin current control-based magnetic random access memory and preparation method thereof

A magnetic random access memory and flow control technology, applied in the fields of information technology and microelectronics, can solve problems such as restricting the development of information technology and unfavorable miniaturization of memory devices, and achieve the effects of long service life, low power consumption and high stability

Inactive Publication Date: 2019-12-31
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

However, magnetic storage based on the spin-orbit moment effect usually requires the assistance of an external magnetic field, which is not conducive to the miniaturization of storage devices and will restrict the further development of information technology. Therefore, how to use the spin-orbit moment effect to control the magnetization flip without an external magnetic field, Realizing information storage and processing is an urgent need in the information field

Method used

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  • Competitive spin current control-based magnetic random access memory and preparation method thereof
  • Competitive spin current control-based magnetic random access memory and preparation method thereof
  • Competitive spin current control-based magnetic random access memory and preparation method thereof

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Embodiment Construction

[0059] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings. It should be noted that, in the drawings or descriptions of the specification, similar or identical parts all use the same figure numbers. Implementations not shown or described in the accompanying drawings are forms known to those of ordinary skill in the art. Additionally, while illustrations of parameters including particular values ​​may be provided herein, it should be understood that the parameters need not be exactly equal to the corresponding values, but rather may approximate the corresponding values ​​within acceptable error margins or design constraints. The directional terms mentioned in the embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., are only referring to the directions of the...

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Abstract

The invention provides a competitive spin current control-based magnetic random access memory and a preparation method thereof. By applying pulse voltage to a spin orbit coupling layer, the spin orbitmoment effect produced by competitive spin current controls generation of 180-DEG turnover of a magnetic moment of a magnetic free layer in a magnetic tunnel junction, and writing of information is realized. By measuring the change of voltages at two ends of a magnetic tunnel junction, change of tunneling resistance is obtained, and reading of information is achieved.

Description

technical field [0001] The invention relates to the fields of information technology and microelectronics, in particular to a magnetic random access memory based on competitive spin current control and a preparation method thereof. Background technique [0002] In today's information society, people have higher and higher requirements for information processing and storage, and finding new types of non-volatile memory devices and information processing devices has become a current research hotspot and industry trend. Among them, the use of electron spin, not just electron charge, for information processing and storage may be one of the most promising technologies. The current commercially developed spin-transfer torque-magnetic random access memory (STT-MARM) and the spin-orbit moment-magnetic random access memory (SOT-MRAM), which is still in laboratory research, are both based on the magnetization of the magnetic free layer in the storage unit. The reversal of the magneti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/12G11C11/16
CPCG11C11/161H10N50/10H10N50/01
Inventor 王开友刘雄华周志鹏李予才
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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