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Encapsulating slurry for aluminum nitride substrate, and preparation method and application thereof

A technology of aluminum nitride substrate and encapsulation slurry, which is applied in the field of slurry, can solve the problems that cannot meet the application requirements of aluminum nitride substrate high-power chip components, high thermal conductivity, small expansion coefficient, etc., and achieve expansion The coefficients are perfectly matched, the binding force is good, and the surface is smooth

Active Publication Date: 2020-01-03
湖南利德电子浆料股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aluminum nitride substrate high-power chip components use aluminum nitride as the substrate material. Due to the small expansion coefficient and high thermal conductivity of the aluminum nitride substrate material, it is required that the encapsulation dielectric paste for its surface circuit The expansion coefficient of aluminum nitride must be similar to that of aluminum nitride in order to match well. However, the existing encapsulation dielectric paste is mainly used for aluminum oxide substrate chip resistors, which cannot meet the needs of aluminum nitride substrate high-power chip resistors. The application requirement that the change rate of component reburning is less than ±5%

Method used

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  • Encapsulating slurry for aluminum nitride substrate, and preparation method and application thereof
  • Encapsulating slurry for aluminum nitride substrate, and preparation method and application thereof
  • Encapsulating slurry for aluminum nitride substrate, and preparation method and application thereof

Examples

Experimental program
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Effect test

Embodiment 1～6

[0065] Carry out the preparation of glass powder according to each raw material in table 1 and raw material content:

[0066] Raw materials for preparing glass powder and the content of each raw material in Table 1 embodiment 1~6

[0067]

[0068] Preparation method of glass powder:

[0069] By weight percentage in Table 1, ZnO, SiO 2 、Al 2 o 3 、H 3 BO 3 After weighing, use a vertical powderer to mix thoroughly, then put it into a corundum crucible, without preheating or slowly heating up, directly put it into a high-temperature furnace at a high temperature of 1100-1200 ° C, keep it warm for 30 minutes, and then pour the molten glass It is poured into deionized water for water quenching, and finally the glass slag after water quenching is ball milled, dried and pulverized with a zirconia tank and zirconia balls to obtain a finished glass powder with a particle size of 1-3.5 μm.

[0070] Prepare the organic vehicle according to the composition and composition content ...

Embodiment 7～12

[0091] The encapsulation slurry is prepared according to the method of Example 3 and Example 4. The difference from Example 3 and Example 4 is that different inorganic additives are used to replace the additives in Example 3 and Example 4. The inorganic additives are listed in Table 4. Ingredient and ingredient content used.

[0092] Inorganic additive components and slurry performance test results in Table 4 Examples 7-12

[0093]

[0094]

[0095] The performance detection methods in Table 4 are the same as those in Table 3. The results show that after adding the inorganic additives used in the present invention, the prepared encapsulation slurry has little influence on resistance, and the resistance change rate is less than ±5%. , the number of bubbles on the surface is less than 5, and the bonding force with the aluminum nitride substrate is good.

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Abstract

The invention provides an encapsulating slurry for an aluminum nitride substrate. The encapsulating slurry comprises 65-80 wt% of a glass powder, 0-10 wt% of an inorganic additive and 10-35 wt% of anorganic carrier; and the glass powder is prepared from 50-75 wt% of ZnO, 1-15 wt% of SiO2, 0-3 wt% of Al2O3 and 7-45 wt% of H3BO3. The encapsulating slurry for the aluminum nitride substrate is perfectly matched with the expansion coefficient of the aluminum nitride substrate, is sintered to form a smooth and flat surface, has a good binding force, and is free of toxic elements such as lead, chromium and mercury; and particularly, after the encapsulating medium slurry is sintered on a circuit on the surface of the aluminum nitride substrate, the resistance change rate of a resistance layer before and after the sintering is less than + / -5%. The invention further provides a preparation method and an application of the encapsulating slurry for the aluminum nitride substrate.

Description

technical field [0001] The invention relates to the technical field of slurry, in particular to an encapsulating slurry for an aluminum nitride substrate and a preparation method and application thereof. Background technique [0002] Aluminum nitride substrate high-power chip components are mainly used in military radio frequency antennas, aerospace, radar, mobile phones, 5G communication equipment, automotive electronics and other fields. At present, the global sales volume exceeds 100 billion per month, and the annual growth rate Reach more than 20%. [0003] At present, the encapsulation dielectric slurry of the major manufacturers of aluminum nitride substrate high-power chip components in China mainly relies on imports, mainly from the United States and Japan, and no domestic slurry manufacturer has developed the encapsulation medium for aluminum nitride substrates. Dielectric paste, which seriously restricts the development of aluminum nitride substrate high-power chi...

Claims

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Application Information

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IPC IPC(8): C03C8/24
CPCC03C8/24
Inventor 刘飘宁天翔宁文敏
Owner 湖南利德电子浆料股份有限公司
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